Sökning: "Martin Von Haartman"
Hittade 1 avhandling innehållade orden Martin Von Haartman.
1. Low-frequency noise characterization, evaluation and modeling of advanced Si- and SiGe-based CMOS transistors
Sammanfattning : A wide variety of novel complementary-metal-oxide-semiconductor (CMOS) devices that are strong contenders for future high-speed and low-noise RF circuits have been evaluated by means of static electrical measurements and low-frequency noise characterizations in this thesis. These novel field-effect transistors (FETs) include (i) compressively strained SiGe channel pMOSFETs, (ii) tensile strained Si nMOSFETs, (iii) MOSFETs with high-k gate dielectrics, (iv) metal gate and (v) silicon-on-insulator (SOI) devices. LÄS MER
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