Sökning: "MOSFET"

Visar resultat 21 - 25 av 86 avhandlingar innehållade ordet MOSFET.

  1. 21. Integration of silicide nanowires as Schottky barrier source/drain in FinFETs

    Författare :Zhen Zhang; Shi-Li Zhang; Tsu-Jae King Liu; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; CMOS technology; MOSFET; FinFET; Schottky diode; Schottky barrier soure drain; silicide; SALICIDE; SOI; multiple-gate; nanowire; sidewall transfer lithography; Electronics; Elektronik;

    Sammanfattning : The steady and aggressive downscaling of the physical dimensions of the conventional metal-oxide-semiconductor field-effect-transistor (MOSFET) has been the main driving force for the IC industry and information technology over the past decades. As the device dimensions approach the fundamental limits, novel double/trigate device architecture such as FinFET is needed to guarantee the ultimate downscaling. LÄS MER

  3. 22. Vertical Heterostructure III-V MOSFETs for CMOS, RF and Memory Applications

    Författare :Adam Jönsson; Nanoelektronik; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Nanowire; MOSFET; CMOS; RRAM; III-V; InAs; GaSb; InGaAs; Heterostructure; vertical; nanowire NW ; MOSFET; III-V materials; RRAM; RF; CMOS; InAs; GaSb; InGaAs; heterostructure; Vertical nanowire;

    Sammanfattning : This thesis focuses mainly on the co-integration of vertical nanowiren-type InAs and p-type GaSb MOSFETs on Si (Paper I & II), whereMOVPE grown vertical InAs-GaSb heterostructure nanowires areused for realizing monolithically integrated and co-processed all-III-V CMOS.Utilizing a bottom-up approach based on MOVPE grown nanowires enablesdesign flexibilities, such as in-situ doping and heterostructure formation,which serves to reduce the amount of mask steps during fabrication. LÄS MER

  4. 23. Electrical properties of thermal oxides on SiC manufactured in an alumina furnace

    Författare :Fredrik Allerstam; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; MOSFET; 6H-SiC; 4H-SiC; Silicon carbide; MOS; TDRC; CV; thermal dielectric relaxation current; interface states;

    Sammanfattning : A process to achieve high inversion channel mobility in 4H-SiC MOSFETs is needed to enable manufacturing of devices for high power applications. In this thesis, investigations on the electrical properties of oxides produced in an alumina furnace are presented. LÄS MER

  5. 24. High Frequency Analysis of Silicon RF MOS Transistors

    Författare :Johan Ankarcrona; Jörgen Olsson; Kjell Jeppson; Uppsala universitet; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Electronics; RF-power; LDMOS; Microwave transistor; SOI; Silicon; MOSFET; Elektronik; Electronics; Elektronik;

    Sammanfattning : Today, the silicon technology is well established for RF-applications (f~1-100 GHz), with emphasis on the lower frequencies (f < 5 GHz). The field of RF power devices is extensive concerning materials and devices. One of the important RF-devices is the silicon LDMOS transistor. LÄS MER

  7. 25. Simulation and Optimization of SiC Field Effect Transistors

    Författare :Kent Bertilsson; Mittuniversitetet; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; SiC; MOSFET; MESFET; Thermal Effects; Device modeling; Optimization; Electrical engineering; electronics and photonics; Elektroteknik; elektronik och fotonik;

    Sammanfattning : .... LÄS MER