Sökning: "Low temperature physics"
Visar resultat 21 - 25 av 450 avhandlingar innehållade orden Low temperature physics.
21. Photoluminescence Characteristics of III-Nitride Quantum Dots and Films
Sammanfattning : III-Nitride semiconductors are very promising in both electronics and optical devices. The ability of the III-Nitride semiconductors as light emitters to span the electromagnetic spectrum from deep ultraviolet light, through the entire visible region, and into the infrared part of the spectrum, is a very important feature, making this material very important in the field of light emitting devices. LÄS MER
22. Quantum and Ballistic Nanodevices
Sammanfattning : In this thesis, electron transport in quantum and ballistic devices was studied. The devices studied here were quantum wires, planar quantum dots, ballistic rectifiers, artificial functional materials, and three-terminal ballistic junctions. The possible application of such devices in the future nanoelectronics was also investigated. LÄS MER
23. Nanocalorimetry of electronic phase transitions in systems with unconventional superconductivity and magnetic ordering
Sammanfattning : In this thesis, low temperature specific heat measurements on small (μg) single crystals of different superconducting and magnetic systems are presented. The device used in this work features a combination of high sensitivity and good accuracy over the temperature range 1-400 K and allows measurements in high magnetic fields. LÄS MER
24. Mesoscopic phenomena in hybrid superconductor/ferromagnet structures
Sammanfattning : This thesis explores peculiar effects of mesoscopic structures revealed at low temperatures. Three particular systems are studied experimentally: Ferromagnetic thin films made of diluted Pt1-xNix alloy, hybrid nanoscale Nb-Pt1-xNix-Nb Josephson junctions, and planar niobium Josephson junction with barrier layer made of Cu or Cu0.47Ni0.53 alloy. LÄS MER
25. MOVPE Growth and Characterization of Low-Dimensional III-V Semiconductor Structures
Sammanfattning : Metalorganic vapour phase epitaxy is used for growth of low-dimensional III-V semiconductor structures. The roughness of heterointerfaces in GaAs/GaInP quantum well structures is studied by photoluminescence emission from extremely narrow quantum wells. LÄS MER