Sökning: "Low temperature physics"
Visar resultat 11 - 15 av 450 avhandlingar innehållade orden Low temperature physics.
11. Resonant Tunneling in Laterally Confined Quantum Structures
Sammanfattning : In the thesis, three-dimensionally confined resonant tunneling structures were studied experimentally. Two approaches were used for obtaining quantum confinement: gate-defined lateral constriction of double barrier structures, and epitaxial growth of self-assembled quantum dots. LÄS MER
12. Hybrid superconductor junctions with diluted PtNi ferromagnetic interlayer
Sammanfattning : This thesis describes experimental investigation of thin films made of diluted Pt 1-x Ni x ferromagnet alloy and Nb-Pt 1-x -Nb Josephson junctions. Such Hybrid Superconductor-Ferromagnet (S-F) Structures are of significant interest because of the new physics involved and possible applications in low temperature and spintronic devices. LÄS MER
13. Quantum electronic transport in low-dimensional semiconductors
Sammanfattning : Electronic transport is studied at low temperatures in two-dimensional electron gases (2DEGs) and in mesoscopic semiconductor microstructures. The method of microwave-detection of the Shubnikov-de Haas effect for the contact-free characterisation of transport properties of 2DEGs is explored using both magnetic-field modulation and light-induced carrier modulation. LÄS MER
14. Transport Studies of Local-Gate Defined Quantum Dots in Nanowires
Sammanfattning : This thesis focuses on electrical transport in semiconductor InAs nanowires grown by chemical beam epitaxy. Initially, transport length scales of homogeneous InAs n-type nanowires are characterized by low-temperature magnetoconductance measurements. The measurements show phase-coherent conductivity corrections. LÄS MER
15. Low and High Energy Ion Beams in Nanotechnology
Sammanfattning : In this thesis, two ways of fabrication of nanometer-sized semiconductor features are presented. Low Energy Ion Implantation (LEII) has been used to create shallow (sub-50 nm) and laterally small (5 m m – 200 nm) features by 10 keV As+ doping of B background doped Si. LÄS MER