Sökning: "Low operating current"

Visar resultat 1 - 5 av 175 avhandlingar innehållade orden Low operating current.

  1. 1. Ultra-Low Power InAs/AlSb HEMTs for Cryogenic Low-Noise Applications

    Författare :Giuseppe Moschetti; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; low noise; InAs AlSb; metamorphic; low power; high frequency; high electron mobility transistor HEMT ; cryogenic; ion implantation;

    Sammanfattning : The InAs/AlSb high electron mobility transistor (HEMT) is an emerging microwave device technology for ultra-low power and low noise applications. Due to the low bandgap (0. LÄS MER

  2. 2. Low-temperature District Heating : Various Aspects of Fourth-generation Systems

    Författare :Helge Averfalk; Sven Werner; Brian Elmegaard; Högskolan i Halmstad; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; District heating; low temperature; three-pipe systems; 4GDH-3P; District heating; low temperature; three-pipe systems; 4GDH-3P;

    Sammanfattning : With decreasing heat demand and less availability of high-temperature heat supply in future energy systems, the current district heating systems may experience increased competition on the heat market. A viable option to mitigate increasing competition is to operate systems with lower temperature levels, and the most conceivable way to achieve lower temperature levels is to decrease return temperatures. LÄS MER

  3. 3. InAs/AlSb HEMTs for Cryogenic Low-Noise Applications

    Författare :Giuseppe Moschetti; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; cryogenic; metamorphic; high frequency; high electron mobility transistor HEMT ; low power; low noise.; InAs AlSb;

    Sammanfattning : The InAs/AlSb high electron mobility transistor (HEMT) is an emerging microwave device technology. The high electron mobility and high peak electron velocity of the InAs channel makes this device technology a potential candidate for low-noise applications operating at very low power dissipation. LÄS MER

  4. 4. Low-Power HEMT LNAs for Quantum Computing

    Författare :Yin Zeng; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; low-noise amplifier; qubit; Cryogenic; InP HEMT.; quantum computing; low-power;

    Sammanfattning : The rapid development of quantum computing technology predicts much more qubits to handle in the detection, readout, and amplification of qubits than in today's system. Due to the limited cooling capability of the dilution refrigerator, the current low-noise amplifiers (LNAs) are in need of ten to hundred times reduced dc power consumption yet with lowest noise temperature at qubit readout frequencies, typcially 4-12 GHz. LÄS MER

  5. 5. Design Space Exploration of Digital Circuits for Ultra-low Energy Dissipation

    Författare :Syed Muhammad Yasser Sherazi; Institutionen för elektro- och informationsteknik; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; CMOS; ultra low-voltage; ultra low-energy; subthreshold sub-VT ; body biasing; pipelining; unfolding; half-band digital filter.;

    Sammanfattning : The ever expanding market of ultra portable electronic products is compelling the designer to invest major efforts in the development of small and low energy electronic devices. The driving force and benefactors of such devices are (but not limited to) e-health system, sensor network applications, security systems, environmental applications, and home automation systems. LÄS MER