Sökning: "Low Noise Amplifier"
Visar resultat 6 - 10 av 82 avhandlingar innehållade orden Low Noise Amplifier.
6. InP DHBT Amplifiers and Circuit Packaging up to Submillimeter-Wave Frequencies
Sammanfattning : This thesis treats the design and characterization of amplifiers operating up tosubmillimeter-wave frequencies and packaging of such circuits into waveguidemodules. The circuits use an advanced indium phosphide (InP) double heterojunctionbipolar transistor (DHBT) process with a multilayer back-end. LÄS MER
7. InP High Electron Mobility Transistors for Cryogenic Low-Noise and Low-Power Amplifiers
Sammanfattning : The InAlAs/InGaAs/InP high-electron mobility transistor (InP HEMT) is the preferred low-noise device in cryogenic low-noise amplifiers (LNAs) operating at 5-15 K. Such LNAs are utilized in microwave and millimeter-wave detection in radio astronomy. LÄS MER
8. YBa2Cu3O7-δ Biepitaxial and Step Edge Josephson Junctions on MgO Substrates. SQUID Amplifier
Sammanfattning : This thesis concerns the preparation of Josephson junctions and their applications in Superconducting Quantum Interference Devices (SQUIDs). High temperature superconductors were used for operation at 77 K, the boiling temperature of liquid nitrogen. LÄS MER
9. Low-Power HEMT LNAs for Quantum Computing
Sammanfattning : The rapid development of quantum computing technology predicts much more qubits to handle in the detection, readout, and amplification of qubits than in today's system. Due to the limited cooling capability of the dilution refrigerator, the current low-noise amplifiers (LNAs) are in need of ten to hundred times reduced dc power consumption yet with lowest noise temperature at qubit readout frequencies, typcially 4-12 GHz. LÄS MER
10. Noise Properties of the Single Electron Transistor
Sammanfattning : The Single Electron Transistor (SET) is a sensitive electrometer with a charge sensitivityultimately limited by noise. In this thesis we present measurements of noiseproperties and charge sensitivity of the radio-frequency Single Electron Transistor. LÄS MER