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Visar resultat 1 - 5 av 16 avhandlingar som matchar ovanstående sökkriterier.

  1. 1. Design and Characterization of RF-LDMOS Transistors and Si-on-SiC Hybrid Substrates

    Författare :Sara Lotfi; Jörgen Olsson; Örjan Vallin; Jean-Pierre Raskin; Uppsala universitet; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; LDMOS; RF; losses; crosstalk; silicon carbide; Si-on-SiC hybrid substrate; wafer bonding; CMOS; Teknisk fysik med inriktning mot elektronik; Engineering Science with specialization in Electronics;

    Sammanfattning : With increasing amount of user data and applications in wireless communication technology, demands are growing on performance and fabrication costs. One way to decrease cost is to integrate the building blocks in an RF system where digital blocks and high power amplifiers then are combined on one chip. LÄS MER

  3. 2. Design and Characterization of RF-Power LDMOS Transistors

    Författare :Olof Bengtsson; Jörgen Olsson; Lars Vestling; Claes Beckman; Olof Tornblad; Uppsala universitet; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Power Amplifiers; LDMOS transistors; RF-power; IMD; Technology CAD; Load-Pull; Electronics; Elektronik;

    Sammanfattning : In mobile communication new applications like wireless internet and mobile video have increased the demand of data-rates. Therefore, new more wideband systems are being implemented. LÄS MER

  4. 3. High efficiency power amplifiers for wireless communications

    Författare :Hossein Mashad Nemati; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; load modulation; GaN; supply modulation; LDMOS; efficiency; Power amplifier; MMIC; mHEMT; transmitter architecture;

    Sammanfattning : This thesis presents state-of-the-art high efficiencyharmonically-tuned power amplifiers (PAs) and investigates thecharacteristics and potentials of such amplifiers in two of the mostpromising efficiency enhancement techniques, dynamic supply and load modulation.In this work, a 10 W LDMOS harmonically-tuned PA with 80% power-added-efficiency (PAE) isrealized at 1 GHz. LÄS MER

  5. 4. Optimization of LDMOS Transistor in Power Amplifiers for Communication Systems

    Författare :Ahsan-Ullah Kashif; Qamar-ul Wahab; Christer Svensson; Joachim Wurfl; Linköpings universitet; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; RF-LDMOS; power amplifiers; technology CAD; load-pull; non-linear analysis; and switching analysis; Semiconductor physics; Halvledarfysik;

    Sammanfattning : The emergence of new communication standards has put a key challenge for semiconductor industry to develop RF devices that can handle high power and high data rates simultaneously. The RF devices play a key role in the design of power amplifiers (PAs), which is considered as a heart of base-station. LÄS MER

  7. 5. High Frequency Analysis of Silicon RF MOS Transistors

    Författare :Johan Ankarcrona; Jörgen Olsson; Kjell Jeppson; Uppsala universitet; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Electronics; RF-power; LDMOS; Microwave transistor; SOI; Silicon; MOSFET; Elektronik; Electronics; Elektronik;

    Sammanfattning : Today, the silicon technology is well established for RF-applications (f~1-100 GHz), with emphasis on the lower frequencies (f < 5 GHz). The field of RF power devices is extensive concerning materials and devices. One of the important RF-devices is the silicon LDMOS transistor. LÄS MER