Sökning: "L Carrier"
Visar resultat 1 - 5 av 38 avhandlingar innehållade orden L Carrier.
1. On the performance of Massive MIMO systems with single carrier transmission and phase noise
Sammanfattning : In the last decade we have experienced a rapid increase in the demand for high data rates over cellular networks. This increase has been partly satisfied by the introduction of multi-user multiple-input multiple-output (MU-MIMO). LÄS MER
2. Structural enzymology of oxalate degradation in Oxalobacter formigenes
Sammanfattning : Oxalic acid, as one of nature's most highly oxidised compounds, is toxic to most organisms. It is introduced in the human body in the diet but also as a waste product of cellular metabolism. Mammals do not posses the ability to degrade oxalate and must excrete it in the urine or through the intestine. LÄS MER
3. A sub-5 fs 100 TW optical parametric synthesizer
Sammanfattning : State-of-the-art ultrashort light sources in the visible and near-infrared spectral regions provide direct access to the femtosecond realm, thereby enabling understanding and control of electronic processes within matter. On the other hand, ultra-intense light pulses lead to the emergence of relativistic electron motion and many related phenomena, such as electron & ion acceleration and high-order harmonic generation in plasmas. LÄS MER
4. Spectroscopy of semiconductor quantum dots
Sammanfattning : Quantum dots in the Si/Ge and InAs/GaAs materials systems are examined by means of photoluminescence. The spectroscopic study of Si/Ge quantum dots has demonstrated two different radiative recombination channels in the type II band alignment: The spatially direct transition inside the dot and the spatially indirect transition across the dot interface. LÄS MER
5. Growth and Characterization of Strain-engineered Si/SiGe Heterostructures Prepared by Molecular Beam Epitaxy
Sammanfattning : The strain introduced by lattice mismatch is a built-in characteristic in Si/SiGe heterostructures, which has significant influences on various material properties. Proper design and precise control of strain within Si/SiGe heterostructures, i.e. LÄS MER