Sökning: "Knudsen layer"

Hittade 3 avhandlingar innehållade orden Knudsen layer.

  1. 1. Modelling of cathode-plasma interaction in short high-intensity electric arc : Application to Gas Tungsten Arc Welding

    Författare :Alireza Javidi Shirvan; Isabelle Choquet; Håkan Nilsson; Armelle Vardelle; Högskolan Väst; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES; Electric arc discharge; sheath; pre-sheath; Knudsen layer; doped refractory cathode; arc-cathode coupling; Gas Tungsten Arc simulation; OpenFOAM.; Production Technology; Produktionsteknik; Manufacturing and materials engineering; Produktions- och materialteknik;

    Sammanfattning : In arc welding the quality of the weld is strongly influenced by the thermal history of the workpiece which is itself governed by the electric arc heat source. The models for predicting weld properties thus need a good evaluation of the distribution of the heat input from thearc to the workpiece. LÄS MER

  3. 2. Structure, Bonding and Transport of SiC and Graphitic Systems

    Författare :Eleni Ziambaras; Chalmers tekniska högskola; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; nanostructures; Knudsen effect; Silicon Carbide SiC ; van der Waals interactions; density functional theory DFT .; graphite;

    Sammanfattning : Today's development of new electronic devices requires materials that can operate under harsh conditions. One such material is Silicon Carbide (SiC) which exhibits superior properties such as chemical inertness, high durability, high thermal stability, high thermal conductivity, and extreme hardness. LÄS MER

  4. 3. Processing and characterization of silicon carbide (6H-SiC and 4H-SiC) contacts for high power and high temperature device applications

    Författare :Sang Kwon Lee; KTH; []
    Nyckelord :Silicon carbide; ohmic and schottky contacts; co-evaporation; current-voltage; powre devices; nano-particles; Schottky barrier height lowering; TLM structures;

    Sammanfattning : Silicon carbide is a promising wide bandgap semiconductormaterial for high-temperature, high-power, and high-frequencydevice applications. However, there are still a number offactors that are limiting the device performance. LÄS MER