Sökning: "Kiselkarbid"

Visar resultat 6 - 10 av 11 avhandlingar innehållade ordet Kiselkarbid.

1. 6. Chloride-based Silicon Carbide CVD

   Författare :Henrik Pedersen; Erik Janzén; Anne Henry; Yaroslav Koshka; Linköpings universitet; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Chemistry; Kemi;

   Sammanfattning : Silicon carbide (SiC) is a promising material for high power and high frequency devices due to its wide bandgap, high break down field and high thermal conductivity. The most established technique for growth ofepitaxial layers of SiC is chemical vapor deposition (CVD) at around 1550 °C using silane, SiH4, and lighthydrocarbons e g propane, C3H8, or ethylene, C2H4, as precursors heavily diluted in hydrogen. LÄS MER

3. 7. Selectivity Enhancement of Gas Sensitive Field Effect Transistors by Dynamic Operation

   Författare :Christian Bur; Anita Lloyd Spetz; Andreas Schütze; Mike Andersson; Stephen Semancik; Linköpings universitet; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES;

   Sammanfattning : Gas sensitive field effect transistors based on silicon carbide, SiC-FETs, have been applied to various applications mainly in the area of exhaust and combustion monitoring. So far, these sensors have normally been operated at constant temperatures and adaptations to specific applications have been done by material and transducer platform optimization. LÄS MER

4. 8. On Gate Drivers and Applications of Normally-ON SiC JFETs

   Författare :Dimosthenis Peftitsis; Hans-Peter Nee; Johann Walter Kolar; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon Carbide; Normally-ON Junction Field-Effect Transistors JFETs ; Gate-Drive Circuits; Protection circuits; High-Efficiency Converters.; Järnvägsgruppen - Elsystem; Järnvägsgruppen - Elsystem;

   Sammanfattning : In this thesis, various issues regarding normally-ON silicon carbide (SiC)Junction Field-Effect Transistors (JFETs) are treated. Silicon carbide powersemiconductor devices are able to operate at higher switching frequencies,higher efficiencies, and higher temperatures compared to silicon counterparts. LÄS MER

5. 9. Simulation and Electrical Evaluation of 4H-SiC Junction Field Effect Transistors and Junction Barrier Schottky Diodes with Buried Grids

   Författare :Jang-Kwon Lim; Hans-Peter Nee; Mietek Bakowski; Ichiro Omura; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon carbide SiC ; junction field-effect transistors JFETs ; junction barrier schottky diode JBS ; schottky barrier diode SBD ; buried-grid BG technology; simulation; implantation; epitaxial growth; Electrical Engineering; Elektro- och systemteknik;

   Sammanfattning : Silicon carbide (SiC) has higher breakdown field strength than silicon (Si), which enables thinner and more highly doped drift layers compared to Si. Consequently, the power losses can be reduced compared to Si-based power conversion systems. Moreover, SiC allows the power conversion systems to operate at high temperatures up to 250 oC. LÄS MER

7. 10. Advances in SiC growth using chloride-based CVD

   Författare :Stefano Leone; Anne Henry; Erik Janzén; Calvin H. Jr Carter; Linköpings universitet; []
   Nyckelord :NATURAL SCIENCES; NATURVETENSKAP;

   Sammanfattning : Silicon Carbide (SiC) is a wide band-gap semiconductor. Similar to silicon it can be used to make electronic devices which can be employed in several applications. SiC has some unique features, such as wide band-gap, high hardness, chemical inertness, and capability to withstand high temperatures. LÄS MER