Sökning: "Jens Hultman"
Visar resultat 6 - 10 av 22 avhandlingar innehållade orden Jens Hultman.
6. Growth and Phase Stability Studies of Epitaxial Sc-Al-N and Ti-Al-N Thin Films
Sammanfattning : ¨This Thesis treats the growth and characterization of ternary transition metal nitride thin films. The aim is to probe deep into the Ti-Al-N system and to explore novel Sc-Al-N compounds. Thin films were epitaxially grown by reactive dual magnetron sputtering from elemental targets onto single-crystal substrates. LÄS MER
7. Reactive Magnetron Sputter Deposition and Characterization of Thin Films from the Ti-Al-N and Sc-Al-N Systems
Sammanfattning : This Thesis treats the growth and characterization of ternary transition metal nitride thin films. The aim is to probe deeper into the Ti-Al-N system and to explore the novel Sc-Al-N system. Thin films were epitaxially grown by reactive magnetron sputtering from elemental targets onto single-crystal substrates covered with a seed layer. LÄS MER
8. Postponement and Logistics Flexibility in Retailing
Sammanfattning : This dissertation addresses several general logistics problems in retailing regarding meeting a variety of customer demand and availability, efficiency and effectiveness in carrying inventory, and increased logistics flexibility. It builds upon the well-established supply chain principle of postponement, and argues for the benefits associated with it in tackling certain logistics challenges. LÄS MER
9. Magnetron Sputter Epitaxy of GaN
Sammanfattning : Electronic-grade GaN (0001) epilayers have been grown directly on Al2O3 (0001) substrates by reactive DC-magnetron sputter epitaxy (MSE) from a liquid Ga sputtering target in an Ar/N2 atmosphere. The as-grown GaN epitaxial film exhibit low threading dislocation density on the order of ≤ 1010 cm-2 obtained by transmission electron microscopy and modified Williamson-Hall plot. LÄS MER
10. Magnetron Sputter Epitaxy of GaN Epilayers and Nanorods
Sammanfattning : In this research, electronic-grade GaN(0001) epilayers and nanorods have been grown onto Al2O3(0001) and Si(111) substrates, respectively, by reactive magnetron sputter epitaxy (MSE) using liquid Ga as a sputtering target. MSE, employing ultra high vacuum conditions, high-purity source materials, and lowenergy ion assisted deposition from substrate biasing, is a scalable method, lending itself to large area GaN synthesis. LÄS MER