Sökning: "JUNCTION TRANSISTORS"

Visar resultat 1 - 5 av 68 avhandlingar innehållade orden JUNCTION TRANSISTORS.

1. 1. Graphene Hot-electron Transistors

   Författare :Sam Vaziri; Mikael Östling; Max Lemme; Suman Datta; KTH; []
   Nyckelord :Graphene; hot-electron transistors; graphene base transistors; GBT; cross-plane carrier transport; tunneling; ballistic transport; heterojunction transistors; graphene integration; graphene transfer; Informations- och kommunikationsteknik; Information and Communication Technology;

   Sammanfattning : Graphene base transistors (GBTs) have been, recently, proposed to overcome the intrinsic limitations of the graphene field effect transistors (GFETs) and exploit the graphene unique properties in high frequency (HF) applications. These devices utilize single layer graphene as the base material in the vertical hot-electron transistors. LÄS MER

3. 2. High power bipolar junction transistors in silicon carbide

   Författare :Hyung-Seok Lee; Carl-Mikael Zetterling; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon Carbide SiC ; power device; biplar junction transistor; TiW; ohmic contact; current gain; Electronics; Elektronik;

   Sammanfattning : As a power device material, SiC has gained remarkable attention to its high thermal conductivity and high breakdown electric field. SiC bipolar junction transistors (BJTs) are interesting for applications as power switch for 600 V-1200 V applications. LÄS MER

4. 3. Simulation and Electrical Evaluation of 4H-SiC Junction Field Effect Transistors and Junction Barrier Schottky Diodes with Buried Grids

   Författare :Jang-Kwon Lim; Hans-Peter Nee; Mietek Bakowski; Ichiro Omura; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon carbide SiC ; junction field-effect transistors JFETs ; junction barrier schottky diode JBS ; schottky barrier diode SBD ; buried-grid BG technology; simulation; implantation; epitaxial growth; Electrical Engineering; Elektro- och systemteknik;

   Sammanfattning : Silicon carbide (SiC) has higher breakdown field strength than silicon (Si), which enables thinner and more highly doped drift layers compared to Si. Consequently, the power losses can be reduced compared to Si-based power conversion systems. Moreover, SiC allows the power conversion systems to operate at high temperatures up to 250 oC. LÄS MER

5. 4. Large-Signal Modeling of Microwave Transistors

   Författare :Lars Bengtsson; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; large-signal; HEMT; non-linear models; de-embedding; high-efficiency; class-E amplifier; LDMOS; HBT; HFET; model parameter extraction; microwave transistors;

   Sammanfattning : The development of computer aided design tools for microwave circuit design has increased the interest for accurate transistor models. The circuit complexity has grown as the CAD tools have been improved and the need to predict how non-linear circuits behave has also been increased. LÄS MER

7. 5. Light-Emitting Electrochemical Transistors

   Författare :Jiang Liu; Magnus Berggren; Isak Engquist; Qibing Pei; Linköpings universitet; []
   Nyckelord :;

   Sammanfattning : Since the discovery of conductive polymers in 1977, the implementation of organic conjugated materials in electronic applications has been of great interest in both industry and academia. The goal of organic electronics is to realize large-area, inexpensive and mechanically-flexible electronic applications. LÄS MER