Sökning: "Ion-bombardment"
Visar resultat 1 - 5 av 22 avhandlingar innehållade ordet Ion-bombardment.
1. Engineered ion-bombardment as a tool in thin film deposition
Sammanfattning : Energetic-ion bombardment has become an attractive route to modify the crystal growth and deposit high quality thin films. In high-power impulse magnetron sputtering (HiPIMS) where the discharge is characterized by a significant amount of ions of the sputter-ejected atoms, energetic-ion bombardment effects could not be underestimated. LÄS MER
2. Fundamental Processes in SiO2 under Ion Bombardment
Sammanfattning : Investigations of sputtering, electron emission and oxide growth under 40-300 keV H+, He+, N+, Ne+, Ar+, Kr+ and Xe+ ion bombardment of SiO2 are presented in this thesis. To accurately determine SiO2 sputtering yields, a new measurement method was developed where the electron emission was monitored during sputtering through thin SiO2 films on Si substrates. LÄS MER
3. Sputtered Carbon Nitride Thin Films
Sammanfattning : The relation between the growth conditions and the film structure and properties of reactively magnetron sputtered carbon nitride CNx (0 ≤ x ≤ 0.6) thin films has been studied. The growth of CNx films has been studied when varying the process parameters, such as substrate temperature, N2 (partial) pressure and ion flux. LÄS MER
4. Development and tribological characterisation of magnetron sputtered TiB2 and Cr/CrN coatings
Sammanfattning : The aim of this thesis was to develop wear resistant physical vapour deposited coatings of TiB2 as well as multilayers of Cr/CrN. The correlation between deposition parameters and fundamental coating properties such as microstructure, composition, residual stress and hardness has been investigated. LÄS MER
5. Magnetron Sputter Epitaxy of GaN
Sammanfattning : Electronic-grade GaN (0001) epilayers have been grown directly on Al2O3 (0001) substrates by reactive DC-magnetron sputter epitaxy (MSE) from a liquid Ga sputtering target in an Ar/N2 atmosphere. The as-grown GaN epitaxial film exhibit low threading dislocation density on the order of ≤ 1010 cm-2 obtained by transmission electron microscopy and modified Williamson-Hall plot. LÄS MER