Sökning: "Insulated gate bipolar transistors"
Visar resultat 6 - 10 av 10 avhandlingar innehållade orden Insulated gate bipolar transistors.
6. 4H-SiC epitaxy investigating carrier lifetime and substrate off-axis dependence
Sammanfattning : Silicon carbide (SiC) is a wide bandgap semiconductor with unique material properties making it useful for various device applications using high power, high frequency and high temperature. Compared to Si-based electronics, SiC based electronics have an improved energy efficiency. LÄS MER
7. Ultrahigh-Voltage Silicon Carbide Device Performance, Requirements, and Limitations in High-Power Applications
Sammanfattning : The increased awareness of the on-going climate change accelerates the electric energy system transformation from fossil-fueled power sources towards systems with larger portions of renewable energy sources. Moreover, the grid infrastructure requires reinforcements to cope with increasing electrical energy demand. LÄS MER
8. Waste-heat Recovery Using Thermoelectricity and Silicon Carbide Power Electronics
Sammanfattning : Energy consumption in the world has increased continuously due to a growing population and increased energy consumption per capita. Moreover, the largest part of consumed energy still comes from fossil sources which in 2016 was more than 130 PWh. LÄS MER
9. Electrical Characterisations of Bearings
Sammanfattning : Mechanical bearings are an integral part of industry, and are used in various places in order to reduce friction between two interacting surfaces and are used to transmit power and loads. Mechanical bearings are one of the most extensively used components within the wind industry, but on the other hand they are also one of the most dominantly failing failed components. LÄS MER
10. Carrier Lifetime Relevant Deep Levels in SiC
Sammanfattning : Silicon carbide (SiC) is currently under development for high power bipolar devices such as insulated gate bipolar transistors (IGBTs). A major issue for these devices is the charge carrier lifetime, which, in the absence of structural defects such as dislocations, is influenced by point defects and their associated deep levels. LÄS MER