Sökning: "Insulated gate bipolar transistors"

Visar resultat 6 - 10 av 10 avhandlingar innehållade orden Insulated gate bipolar transistors.

  1. 6. 4H-SiC epitaxy investigating carrier lifetime and substrate off-axis dependence

    Författare :Louise Lilja; Peder Bergman; Jawad ul-Hassan; Ulrike Grossner; Linköpings universitet; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY;

    Sammanfattning : Silicon carbide (SiC) is a wide bandgap semiconductor with unique material properties making it useful for various device applications using high power, high frequency and high temperature. Compared to Si-based electronics, SiC based electronics have an improved energy efficiency. LÄS MER

  2. 7. Ultrahigh-Voltage Silicon Carbide Device Performance, Requirements, and Limitations in High-Power Applications

    Författare :Daniel Johannesson; Hans-Peter Nee; Staffan Norrga; Muhammad Nawaz; Alberto Castellazzi; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; 4H-SiC; Current Filamentation; Device Characterization; Dynamic Avalanche; JTE Structure; Junction Termination Extension Design; SiC BJT; SiC GTO Thyristor; SiC IGBT; SiC MOSFET; SiC PiN Diode; Silicon Carbide; TCAD Simulation; Wide bandgap device; Electrical Engineering; Elektro- och systemteknik;

    Sammanfattning : The increased awareness of the on-going climate change accelerates the electric energy system transformation from fossil-fueled power sources towards systems with larger portions of renewable energy sources. Moreover, the grid infrastructure requires reinforcements to cope with increasing electrical energy demand. LÄS MER

  3. 8. Waste-heat Recovery Using Thermoelectricity and Silicon Carbide Power Electronics

    Författare :Arash Edvin Risseh; Hans-Peter Nee; Torbjörn Thiringer; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Thermoelectricity; Power converter; Silicon Carbide; MOSFET; Power management; Thermoelectric generator; Renewable energy; Vehicle; Power electronic; Waste heat; Ultra-low inductance; Power module; Termoelektrisk energiomvandling; Kiselkarbid MOSFET; Effektomvandlare; Förnybar energikälla; Effektelektronik; Spillvärme; Effektmodul; Låg induktiv module; Electrical Engineering; Elektro- och systemteknik;

    Sammanfattning : Energy consumption in the world has increased continuously due to a growing population and increased energy consumption per capita. Moreover, the largest part of consumed energy still comes from fossil sources which in 2016 was more than 130 PWh. LÄS MER

  4. 9. Electrical Characterisations of Bearings

    Författare :Abhishek Joshi; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Ball bearing; Equivalent circuit model; Lubricants; Bearing Capacitance; Spherical bearing; Mechanical bearing; Bearing currents; Electrical conduction; Electrical characterisation;

    Sammanfattning : Mechanical bearings are an integral part of industry, and are used in various places in order to reduce friction between two interacting surfaces and are used to transmit power and loads. Mechanical bearings are one of the most extensively used components within the wind industry, but on the other hand they are also one of the most dominantly failing failed components. LÄS MER

  5. 10. Carrier Lifetime Relevant Deep Levels in SiC

    Författare :Ian Don Booker; Einar Sveinbjörnsson; Erik Janzén; Anthony Peaker; Linköpings universitet; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Silicon carbide; Deep level transient spectroscopy; Deep level; Carrier lifetime; Time-resolved photoluminescence;

    Sammanfattning : Silicon carbide (SiC) is currently under development for high power bipolar devices such as insulated gate bipolar transistors (IGBTs). A major issue for these devices is the charge carrier lifetime, which, in the absence of structural defects such as dislocations, is influenced by point defects and their associated deep levels. LÄS MER