Sökning: "Insulated gate bipolar transistors"

Visar resultat 1 - 5 av 8 avhandlingar innehållade orden Insulated gate bipolar transistors.

  1. 1. On Gate Drivers for MOS-Controlled Power Devices and dv-dt Filters for Train Traction Converters

    Detta är en avhandling från Stockholm : KTH Royal Institute of Technology

    Författare :Erik Velander; KTH.; [2017]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Power semiconductor devices; DC-AC power converters; Silicon carbide; Insulated gate bipolar transistors; P-i-n diodes; Schottky diodes; Traction motors; Power MOSFET; Krafthalvledare; DC-AC kraftomvandlare; kiselkarbid; IGBT; P-i-n dioder; Schottky dioder; traktionsmotorer; Effekt-MOSFET; Electrical Engineering; Elektro- och systemteknik;

    Sammanfattning : In this thesis, low-loss gate-drive solutions and a proposed dv/dt-filter have been investigated with focus on train traction converters with dv/dt constraints.By using the silicon carbide (SiC) junction field-effect transistor (JFET), the switching losses can be significantly reduced compared to the commonly used insulated-gate bipolar transistor (IGBT), but complex gate-driver solutions are required for high utilization in terms of loss reduction. LÄS MER

  2. 2. High power bipolar junction transistors in silicon carbide

    Detta är en avhandling från Stockholm : KTH

    Författare :Hyung-Seok Lee; KTH.; [2005]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon Carbide SiC ; power device; biplar junction transistor; TiW; ohmic contact; current gain; TECHNOLOGY Electrical engineering; electronics and photonics Electronics; TEKNIKVETENSKAP Elektroteknik; elektronik och fotonik Elektronik;

    Sammanfattning : As a power device material, SiC has gained remarkable attention to its high thermal conductivity and high breakdown electric field. SiC bipolar junction transistors (BJTs) are interesting for applications as power switch for 600 V-1200 V applications. LÄS MER

  3. 3. On Reliability of SiC Power Devices in Power Electronics

    Detta är en avhandling från Stockholm : KTH Royal Institute of Technology

    Författare :Diane-Perle Sadik; KTH.; [2017]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon Carbide; Metal-Oxide-Semiconductor Field-Effect Transistor MOSFET ; Junction Field-Effect Transistor JFET ; Bipolar Junction Transistor BJT ; Reliability; Failure Analysis; Reliability Testing; Short- Circuit Currents; Humidity; Resonant converter; Series-resonant converter SLR ; Base drive circuits; Gate drive circuits; Life-Cycle Cost Analysis LCCA ; Kiselkarbid; MOSFETar; JFETar; Bipolär Junction Transistor BJT ; Tillförlitlighet; Robusthet; Felanalys; Tillförlitlighetstestning; Kortslutningsströmmar; Luftfuktighet; Resonansomvandlare; Serie-resonansomvandlare SLR ; Basdrivkretsar; Gate-drivkretsar; Felskydd; Livscykelkostnadsanalys; Electrical Engineering; Elektro- och systemteknik;

    Sammanfattning : Silicon Carbide (SiC) is a wide-bandgap (WBG) semiconductor materialwhich has several advantages such as higher maximum electric field, lowerON-state resistance, higher switching speeds, and higher maximum allowablejunction operation temperature compared to Silicon (Si). In the 1.2 kV - 1. LÄS MER

  4. 4. Physical modeling of on-state losses in bipolar Si and SiC power devices

    Detta är en avhandling från Institutionen för elektronisk systemkonstruktion

    Författare :Olof Tornblad; KTH.; [1998]
    Nyckelord :;

    Sammanfattning : Power losses affect both the installation- and long-term cost of power electronic systems. The installation cost is related to the fatt that power losses in silicon power devices generate heat and make installation of heat sinks and water cooling necessary. If self-heating effects are strong, lotal overheating can eventually lead to device failure. LÄS MER

  5. 5. 4H-SiC epitaxy investigating carrier lifetime and substrate off-axis dependence

    Detta är en avhandling från Linköping : Linköping University Electronic Press

    Författare :Louise Lilja; Linköpings universitet.; Linköpings universitet.; [2018]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY;

    Sammanfattning : Silicon carbide (SiC) is a wide bandgap semiconductor with unique material properties making it useful for various device applications using high power, high frequency and high temperature. Compared to Si-based electronics, SiC based electronics have an improved energy efficiency. LÄS MER