Sökning: "InP"

Visar resultat 11 - 15 av 181 avhandlingar innehållade ordet InP.

  1. 11. InP HEMT Technology and Applications

    Författare :Anders Mellberg; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Indium phosphide InP ; cryogenic LNA; high electron mobility transistor HEMT ; metal-insulator-metal capacitor; MODFET; thin film resistor; semiconductor device fabrication; MMIC;

    Sammanfattning : Indium phosphide high electron mobility transistors (InGaAs/InAlAs/InP HEMTs) exhibit the highest cut-off frequencies and the lowest microwave noise figures of all transistor technologies. Both InP HEMT technology and associated circuit demonstrators are therefore interesting to explore further. LÄS MER

  3. 12. Strain and Charge Transport in InAsP-InP and InP-InAs Core-Shell Nanowires

    Författare :David Göransson; NanoLund: Centre for Nanoscience; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Nanowire; InAsP-InP core-shell nanowire; InP-InAs core-shell nanowire; strain; XRD; charge transport; Coulomb blockade; Josephson junction; Fysicumarkivet A:2019:Göransson;

    Sammanfattning : The mechanical, optical, and electrical properties of III-V semiconductor heterostructures are investigated in thisthesis. The semiconductor materials are grown by metal-organic vapor phase epitaxy, yielding wire shaped crystals(nanowires) having a length of ~ 1 μm and diameter of ~ 100 nm. LÄS MER

  4. 13. InP-based photonic crystals : Processing, Material properties and Dispersion effects

    Författare :Audrey Berrier; Srinivasan Anand; Alfred Forchel; KTH; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Photonic crystals; indium phosphide; photonic bandgap; Bloch modes; slow light; dispersion; coupled cavity waveguides; chemically assisted ion beam etching; lag effect; cavities; optical losses; carrier transport; carrier lifetimes; negative refraction; photonic bandstructure; Physics; Fysik;

    Sammanfattning : Photonic crystals (PhCs) are periodic dielectric structures that exhibit a photonic bandgap, i.e., a range of wavelength for which light propagation is forbidden. The special band structure related dispersion properties offer a realm of novel functionalities and interesting physical phenomena. LÄS MER

  5. 14. Ultra-Low Noise InP HEMTs for Cryogenic Amplification

    Författare :Joel Schleeh; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; cryogenic; DC power dissipation; MMIC; LNA; InP HEMT; ALD;

    Sammanfattning : InGaAs/InAlAs/InP High Electron Mobility Transistors (InP HEMTs), are today the best devices to design cryogenic low noise amplifiers. However, reported progress in reducing the noise has been slow in the last decade. LÄS MER

  7. 15. Cryogenic Ultra-Low Noise InP High Electron Mobility Transistors

    Författare :Joel Schleeh; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; MMIC; LNA; cryogenic; low noise; DC power dissipation; ALD; GaAs MHEMT; gain fluctuations; InP HEMT;

    Sammanfattning : Indium phosphide high electron mobility transistors (InP HEMTs), are today the best transistors for cryogenic low noise amplifiers at microwave frequencies. Record noise temperatures below 2 K using InP HEMT equipped cryogenic low noise amplifiers (LNAs) were demonstrated already a decade ago. LÄS MER