Sökning: "InP on Si"

Visar resultat 1 - 5 av 28 avhandlingar innehållade orden InP on Si.

  1. 1. Plasma assisted low temperature semiconductor wafer bonding

    Författare :Donato Pasquariello; Uppsala universitet; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Materials science; Wafer Bonding; Oxygen Plasma; InP; Si; Semiconductor; Materialvetenskap; Materials science; Teknisk materialvetenskap; materialvetenskap; Materials Science;

    Sammanfattning : Direct semiconductor wafer bonding has emerged as a technology to meet the demand foradditional flexibility in materials integration. The applications are found in microelectronics, optoelectronics and micromechanics. For instance, wafer bonding is used to produce silicon-on-insulator (SOI) wafers. LÄS MER

  3. 2. InP DHBT Amplifiers and Circuit Packaging up to Submillimeter-Wave Frequencies

    Författare :Klas Eriksson; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; InP; WR05; packaging; noise figure; substrate modes; WR03.; multiple layer interconnect; double heterojunction bipolar transistor DHBT ; G-band; wideband; H-band; waveguide transition; distributed amplifier DA ; millimeter-wave; amplifier; low-noise amplifier LNA ; membrane technology; waveguide module; submillimeter-wave;

    Sammanfattning : This thesis treats the design and characterization of amplifiers operating up tosubmillimeter-wave frequencies and packaging of such circuits into waveguidemodules. The circuits use an advanced indium phosphide (InP) double heterojunctionbipolar transistor (DHBT) process with a multilayer back-end. LÄS MER

  4. 3. High-quality InP on Si and concepts for monolithic photonic integration

    Författare :Carl Junesand; Sebastian Lourdudoss; Wolfgang Stolz; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY;

    Sammanfattning : As the age of Moore’s law is drawing to a close, continuing increase in computing performance is becoming increasingly hard‐earned, while demand for bandwidth is insatiable. One way of dealing with this challenge is the integration of active photonic material with Si, allowing high‐speed optical inter‐ and intra‐chip connects on one hand, and the economies of scale of the CMOS industry in optical communications on the other. LÄS MER

  5. 4. New Methods in the growth of InP on Si and Regrowth of Semi-insulating InP for Photonic Devices

    Författare :Wondwosen Tilahun Metaferia; Sebastian Lourdudoss; Eric Tournié; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY;

    Sammanfattning : This thesis addresses new methods in the growth of indium phosphide on silicon for enabling silicon photonics and nano photonics as well as efficient and cost-effective solar cells. It also addresses the renewal of regrowth of semi-insulating indium phosphide for realizing buried heterostructure quantum cascade lasers with high power and wall plug efficiency for sensing applications. LÄS MER

  7. 5. Epitaxial III-V/Si heterojunctions for photonic devices

    Författare :Giriprasanth Omanakuttan; Sebastian Lourdudoss; Yanting Sun; Harri Lipsanen; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; epitaxy; heterojunction; III-V on Si integration; solar cell; Fysik; Physics;

    Sammanfattning : Monolithic integration of III-V materials on silicon is of great interest for efficient electronic-photonic integrated devices and multijunction solar cells on silicon. However, defect formation in the heteroepitaxial layers due to lattice mismatch, thermal mismatch, and polarity mismatch makes it a great challenge. LÄS MER