Sökning: "InP DHBT"

Visar resultat 6 - 9 av 9 avhandlingar innehållade orden InP DHBT.

  1. 6. MMIC-based Low Phase Noise Millimetre-wave Signal Source Design

    Författare :Thi Ngoc Do Thanh; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; millimetre-wave; MMIC; low frequency noise; phase noise; GaN HEMT; signal source; D-band; InP DHBT; deposition method.; SiGe BiCMOS; frequency multiplier; VCO; passivation;

    Sammanfattning : Wireless technology for future communication systems has been continuously evolving to meet society’s increasing demand on network capacity. The millimetre-wave frequency band has a large amount of bandwidth available, which is a key factor in enabling the capability of carrying higher data rates. LÄS MER

  3. 7. Millimeter-wave Transceiver ICs for Ultrahigh Data Rate Communications Using Advanced III-V and Silicon Technologies

    Författare :Sona Carpenter; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; D-band; frequency multiplier; 110-170 GHz; QPSK; demodulator; I Q modulator; transmitter; high-order modulation; receiver; high data rate; single chip; SiGe BiCMOS; QAM; InP DHBT; direct conversion; Gilbert-cell mixer; millimeter-wave communication; 5G; MMIC; point-to-point radio.;

    Sammanfattning : Today’s main driving parameter for radio transceiver research is the ability to provide high capacity while maintaining low cost, small form factor, and low power consumption. Direct conversion architectures (due to the feasibility of monolithic integration) at millimeter-wave (due to wideband availability) have attracted large interest in recent years because of their potential to meet these demands. LÄS MER

  4. 8. Ultra High Speed InP Heterojunction Bipolar Transistors

    Författare :Mattias Dahlström; KTH; []
    Nyckelord :InP HBT carbon high-speed;

    Sammanfattning : This thesis deals with the development of high speed InPmesa HBT’s with power gain cut—off frequencies up toand above 300 GHz, with high current density and low collectordischarging times.Key developments are Pd—based base ohmics yielding basecontact resistances as low as 10 Ωµm2, base—collector grades to enable to use ofInP in the collector, and an increase in the maximum currentdensity through collector design and thermal optimization. LÄS MER

  5. 9. Integrated Circuit Design for High Data Rate Polymer Microwave Fiber Communication

    Författare :Frida Strömbeck; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY;

    Sammanfattning : The rapid development of semiconductor processes with a maximum frequency of oscillation well above 300 GHz enables new applications at frequencies above 100 GHz to be researched and developed. Such applications include wireless backhaul, wireless access, radar and radiometer sensors, wireless energy distribution and harvesting, etc. LÄS MER