Sökning: "InAs"
Visar resultat 6 - 10 av 136 avhandlingar innehållade ordet InAs.
6. Charge transport in III-V narrow bandgap semiconductor nanowires
Sammanfattning : This thesis describes charge transport in III-V narrow bandgap semiconductor nanowires. We are particularly interested in quantum transport in InSb, InAs and InP-InAs core-shell nanowires. According to the type of transport mechanism dominating in the devices, this thesis can be divided into four parts. LÄS MER
7. Scaling of InGaAs/InAlAs and InAs/AlSb HEMTs for microwave/mm-wave applications
Sammanfattning : The InGaAs/InAlAs high electron mobility transistor (HEMT) offers the highest maximum frequency of oscillation fmax and the lowest noise performance (NFmin) for microwave/mm-wave receivers. Similar to other device technologies, the performance of the InGaAs/InAlAs HEMT has gradually been improved by device scaling. LÄS MER
8. Novel Terahertz Emitters and Detectors: InGaAs Slot Diodes and InAs Self-Switching Diodes
Sammanfattning : Two novel types of diodes for emission and detection of THz radiation have been investigated. The diodes are based on high electron mobility III-V heterostructures. Both diodes are aimed for room-temperature operation, for which there is a demand for new THz technology. For emission, slot diodes based on an InGaAs heterostructure were studied. LÄS MER
9. Photoelectron Spectroscopy Studies of III-V Semiconductor Systems
Sammanfattning : Photoelectron spectroscopy has been used as a main tool to study a number of III-V semiconductor surfaces. This thesis includes studies of a surface reaction, As/InP(110), thin heteroepitaxial layers, InAs on GaAs(111)A and GaAs on AlAs(100), and a diluted magnetic semiconductor, Ga1-xMnxAs. LÄS MER
10. Infrared Photodetectors based on InSb and InAs Nanostructures via Heterogeneous Integration-Rapid Melt Growth and Template Assisted Selective Epitaxy
Sammanfattning : Monolithic heterogeneous integration of III-V semiconductors with the contemporary Si Complementary Metal Oxide Semiconductor (CMOS) technology has instigated a wide range of possibilities and functionalities in the semiconductor industry, in the field of digital circuits, optical sensors, light emitters, and high-frequency communication devices. However, the integration of III-V semiconductors is not trivial due to the differences in lattice parameters, polarity, and thermal expansion coefficient. LÄS MER