Sökning: "InAs"

Visar resultat 16 - 20 av 136 avhandlingar innehållade ordet InAs.

  1. 16. Vertical III-V Nanowire Tunnel Field-Effect Transistor

    Författare :Elvedin Memisevic; Nanoelektronik; []
    Nyckelord :Transistor; TFET; Steep slope; Nanowire; III-V materials; HSQ; Vertical; InAs; GaSb; MOSFET;

    Sammanfattning : In this thesis fabrication and optimization of vertical III-V Tunneling Field-Effect transistors was explored. Usage of vertical nanowires, allows for combination of materials with large lattice mismatch in the same nanowire structure. LÄS MER

  3. 17. Adventures of III-V Semiconductor Surfaces

    Författare :Sandra Benter; NanoLund: Centre for Nanoscience; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; III-V; semiconductor surfaces; Bismuth; InAs; GaAs; droplets; STM; XPS; XPEEM; ARPES; Fysicumarkivet A:2023:Benter;

    Sammanfattning : Tailoring the surface composition and morphology of materials to enable new electronic devices is important for a wide range of applications such as quantum computing or spintronics. A fundamental understanding of the changes induced in the surface during different process steps can help to establish new synthesis routes as well as devices. LÄS MER

  4. 18. Electrical Characterization of III-V Nanostructure

    Författare :Aein Shiri Babadi; Institutionen för elektro- och informationsteknik; []
    Nyckelord :High-κ; Metal-Oxide-Semicondcutor capacitors; MOSCAPs; III-V semiconductors; InAs; GaSb; interface traps; border traps; C-V; Simulations; Nanowire; MOSFET; Fabrication;

    Sammanfattning : This thesis investigates the electronic properties of a number of novel III-V materials and material combinations for transistor applications. In particular, high-κ/InAs metal-oxide-semiconductor (MOS) structures and transport properties of GaSb nanowires have been studied. LÄS MER

  5. 19. Theory of electronic structure and transport in heterostructure nanowires

    Författare :Florinda Viñas Boström; NanoLund: Centre for Nanoscience; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; electronic structure; electron transport; nano; quantum; InAs; GaSb; topological; nanowires; quantum dots; Fysicumarkivet A:2020:Vinas Boström;

    Sammanfattning : Today, semi-conductor nanowires can be grown with very high precision, using epitaxy. This allows for studies of new nanowire-based quantum devices, likely to be part of novel quantum technologies in the future. This thesis concerns nanostructures based on InAs nanowires. LÄS MER

  7. 20. Electronic materials : growth and characterisation

    Författare :Michael A. Grishin; Ulf O. Karlsson; Massimo Sancrotti; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Electrophysics; Photoemission; Ultra-short laser pulse; Thin film; Laser deposition; InSb; InAs; GaSb; Ferroelectrics; Elektrofysik; Electrophysics; Elektrofysik;

    Sammanfattning : In this thesis the InSb(111), InAs(111) and GaSb(001) surfaces have been studied by means of time- and angle-resolved photoemission spectroscopy based upon the femtosecond laser system. The pump-and-probe technique allows to analyse both electron states in the valence band and normally unpopulated electron states above the valence band, which can be occupied by transiently excited carriers at the optically pumped surface. LÄS MER