Sökning: "III-V"

Visar resultat 21 - 25 av 304 avhandlingar innehållade ordet III-V.

1. 21. Surface modification of III-V nanostructures studied by low-temperature scanning tunneling microscopy

   Författare :Yi Liu; NanoLund: Centre for Nanoscience; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; STM; XPS; semiconductor surface; III-V; nanostructure modification; nanowires; self-selective formation; atomic scale imaging; Bi incorporation; Fysicumarkivet A:2022:Liu;

   Sammanfattning : In the past decade, driven by the demand for materials with high performance for next-generation semiconductor devices (e.g. LÄS MER

3. 22. Fabrication of Low-Dimensional Structures in III-V Semiconductors

   Författare :Ivan Maximov; Fasta tillståndets fysik; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; III-V semiconductors; plasma; etching; aerosol; lithography; quantum dots; quantum well wires; quantum point contact; damage; luminescence; Fysicumarkivet A:1997:Maximov; Halvledarfysik; Semiconductory physics;

   Sammanfattning : The thesis presents studies on the processing technology and the characterization of nanometer-sized and low-dimensional structures in III-V semiconductors. Two major approaches are described: 1) the combination of aerosol technology and plasma etching for the fabrication of quantum dots (QDs) in InP-based materials and 2) the use of high-resolution electron beam lithography and plasma or wet chemical etching to make quantum well wires (QWWs) in both GaAs and InP-based structures. LÄS MER

4. 23. Zeeman Interaction in Low-Dimensional III-V Semiconductor Structures

   Författare :Bernhard Kowalski; Fasta tillståndets fysik; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; optically detected spin resonance; spin resonance; effective g-value; III-V semiconductors; low-dimensional structures; quantum wells; quantum dots; Stranski-Krastanow; photoluminescence; GaInAs; single dot Magneto-luminescence; Fysicumarkivet A:1997:Kowalski; Halvledarfysik; Semiconductory physics; GaInAs-InP;

   Sammanfattning : The Zeeman interaction in low-dimensional III-V semiconductor nanostructures is studied. The effective g-value of bulk InGaAs is measured by two different spin resonance techniques. Experimental conditions were found to control the Overhauser effect, thus enabling a highly accurate determination of the g-value, g* = -4.070 ± 0. LÄS MER

5. 24. In-situ Study of the Growth, Composition and Morphology of III-V Semiconductor Nanowires

   Författare :Robin Sjökvist; NanoLund: Centre for Nanoscience; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES; Nanowire; Semiconductor; III-V; Transmission Electron Microscopy; In-situ; Environmental TEM; Crystal growth;

   Sammanfattning : It is widely known that nanoparticle seeded growth of III-V semiconductor nanowires often occurs via the vapor-liquid-solid mechanism. However, conventional growth of nanowires is carried out in closed systems, where mostof the details and dynamics of the growth are impossible to follow. LÄS MER

7. 25. Surfaces and interfaces of low dimensional III-V semiconductor devices

   Författare :Yen-Po Liu; NanoLund: Centre for Nanoscience; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; III-V semiconductor; nanowires; nanosheet; nano-device fabrication; STM; AFM; SGM; OBIC; XPS; Fysicumarkivet A:2022:Liu;

   Sammanfattning : The demand for fast and energy efficient (opto-)electronic applications needs high mobility semiconductor materials, such as InAs with a very high electron mobility and GaSb with a very high hole mobility. Beyond the material itself, also an innovative device geometry is needed, for example, the gate-all-around geometry that provides higher efficiency and electrostatic control for computational units. LÄS MER