Sökning: "III-V"

Visar resultat 16 - 20 av 304 avhandlingar innehållade ordet III-V.

  1. 16. Integration of Ferroelectric HfO2 onto a III-V Nanowire Platform

    Författare :Anton E. O. Persson; Nanoelektronik; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; ferroelectricity; ferroelectric FET; ferroelectric tunnel junction; tunnel field effect transistors; HZO; III-V; nanowire;

    Sammanfattning : The discovery of ferroelectricity in CMOS-compatible oxides, such as doped hafnium oxide, has opened new possibilities for electronics by reviving the use of ferroelectric implementations on modern technology platforms. This thesis presents the ground-up integration of ferroelectric HfO2 on a thermally sensitive III-V nanowire platform leading to the successful implementation of ferroelectric transistors (FeFETs), tunnel junctions (FTJs), and varactors for mm-wave applications. LÄS MER

  3. 17. Vertical III-V Semiconductor Devices

    Författare :Tomas Bryllert; Fasta tillståndets fysik; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Halvledarfysik; Semiconductory physics; heterostructure barrier varactor frequency multiplier; field effect transistor; resonant tunneling; artificial molecule; terahertz; nanowire; Quantum dots;

    Sammanfattning : This thesis is based on three projects that deal with vertical III-V semiconductor devices. The work spans over basic research as well as more applied aspects of III-V semiconductor technology. All projects have in common that they rely on advanced epitaxial growth to form the starting material for device fabrication. LÄS MER

  4. 18. Nanophotonics in absorbing III-V nanowire arrays

    Författare :Nicklas Anttu; Fasta tillståndets fysik; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; III-V semiconductor materials; Nanophotonics; nanowires; electromagnetic modeling; Fysicumarkivet A:2013:Anttu;

    Sammanfattning : We have studied the interaction of light with an array of vertically oriented III-V semiconductor nanowires both theoretically and experimentally. For the theoretical studies, electromagnetic modeling has been employed. LÄS MER

  5. 19. Photoelectron Spectroscopy Studies of III-V Semiconductor Systems

    Författare :Henric Åsklund; Chalmers tekniska högskola; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; low temperature MBE; GaAs 111 A; InAs; core-level; GaMnAs; photoelectron spectroscopy; MEE; GaAs; InP 110 :As; valence-band; core-exciton; diluted magnetic semiconductor; MBE; interface; III-V semiconductor; surface; InAs 111 A; thin films;

    Sammanfattning : Photoelectron spectroscopy has been used as a main tool to study a number of III-V semiconductor surfaces. This thesis includes studies of a surface reaction, As/InP(110), thin heteroepitaxial layers, InAs on GaAs(111)A and GaAs on AlAs(100), and a diluted magnetic semiconductor, Ga1-xMnxAs. LÄS MER

  7. 20. Vertical III-V Nanowires For In-Memory Computing

    Författare :Saketh Ram Mamidala; Nanoelektronik; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; RRAM; 1T1R; gate all-around; MOSFET; III-V nanowire; In-memory computing;

    Sammanfattning : In recent times, deep neural networks (DNNs) have demonstrated great potential in various machine learning applications,such as image classification and object detection for autonomous driving. However, increasing the accuracy of DNNsrequires scaled, faster, and more energy-efficient hardware, which is limited by the von Neumann architecture whereseparate memory and computing units lead to a bottleneck in performance. LÄS MER