Sökning: "III-V semiconductor nanowires"
Visar resultat 1 - 5 av 70 avhandlingar innehållade orden III-V semiconductor nanowires.
1. III-V Devices for Emerging Electronic Applications
Sammanfattning : Today’s digitalized society relies on the advancement of silicon (Si) Complementary Metal Oxide Semiconductor (CMOS) technology, but the limitations of down-scaling and the rapidly increasing demand for added functionality that is not easily achieved in Si, have pushed efforts to monolithically 3D-integrate III-V devices above the Si-CMOS technology. In addition, the demand for increased computational power and handling of vast amounts of data is rapidly increasing. LÄS MER
2. Semiconductor Nanowires: Epitaxy and Applications
Sammanfattning : Semiconductor nanowires are nanoscale objects formed by bottom-up synthesis. In recent years their unique properties have been exploited in fields such as electronics, photonics, sensors and the life sciences. In this work, the epitaxial growth of nanowires and their applications were studied. LÄS MER
3. Transmission Electron Microscopy of III-V Nanowires and Nanotrees
Sammanfattning : In this work, the morphology and crystal structure of epitaxial semiconductor nanowire structures grown by metal-organic vapour phase epitaxy (MOVPE) are studied by electron microscopy methods. In particular, the three-dimensional structure of nanowires and nanotrees has been characterised by scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM) and multi-slice (MS) simulations. LÄS MER
4. Surfaces and interfaces of low dimensional III-V semiconductor devices
Sammanfattning : The demand for fast and energy efficient (opto-)electronic applications needs high mobility semiconductor materials, such as InAs with a very high electron mobility and GaSb with a very high hole mobility. Beyond the material itself, also an innovative device geometry is needed, for example, the gate-all-around geometry that provides higher efficiency and electrostatic control for computational units. LÄS MER
5. In-situ Study of the Growth, Composition and Morphology of III-V Semiconductor Nanowires
Sammanfattning : It is widely known that nanoparticle seeded growth of III-V semiconductor nanowires often occurs via the vapor-liquid-solid mechanism. However, conventional growth of nanowires is carried out in closed systems, where mostof the details and dynamics of the growth are impossible to follow. LÄS MER
