Sökning: "III-V nanostructures"

Visar resultat 21 - 25 av 32 avhandlingar innehållade orden III-V nanostructures.

  1. 21. Epitaxial Growth and Design of Nanowires and Complex Nanostructures

    Författare :Kimberly Dick Thelander; Fasta tillståndets fysik; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Natural science; III-V Semiconductor Materials; Fysik; Kondenserade materiens egenskaper:struktur; phase equilibria; crystallography; thermal and mechanical properties; Condensed matter:stucture; egenskaper termiska och mekaniska ; kristallografi; fasjämvikt; Naturvetenskap; Physics; Nanowires; Vapour Phase Epitaxy; Semiconductory physics; Halvledarfysik;

    Sammanfattning : This thesis describes the epitaxial growth of III-V semiconductor nanowires using Au seed particles, and the design of more complex three-dimensional branched structures from these wires. Growth was performed by metallorganic vapour phase epitaxy, in which precursor molecules for the semiconductor material components are introduced in a low-pressure vapour. LÄS MER

  2. 22. Infrared Photodetectors based on InSb and InAs Nanostructures via Heterogeneous Integration-Rapid Melt Growth and Template Assisted Selective Epitaxy

    Författare :Heera Menon; NanoLund: Centre for Nanoscience; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Rapid Melt Growth RMG ; Template Assisted Selective Epitaxy TASE ; InSb; InAs; infrared detectors; nBn detector; photoconductor; nanostructures; nanowires;

    Sammanfattning : Monolithic heterogeneous integration of III-V semiconductors with the contemporary Si Complementary Metal Oxide Semiconductor (CMOS) technology has instigated a wide range of possibilities and functionalities in the semiconductor industry, in the field of digital circuits, optical sensors, light emitters, and high-frequency communication devices. However, the integration of III-V semiconductors is not trivial due to the differences in lattice parameters, polarity, and thermal expansion coefficient. LÄS MER

  3. 23. Epitaxial growth of semiconductor nanowires

    Författare :Ann Persson; Fasta tillståndets fysik; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; materialteknik; nanowires; nanostructures; growth mechanism; Materiallära; Material technology; Halvledarfysik; Semiconductory physics; nanoelectronics; Au; VSS; VLS; surface diffusion; band gap engineering; InP; ternary system; GaAs; heterostructures; InAs; CBE; epitaxy;

    Sammanfattning : This thesis describes the results obtained from investigations carried out on epitaxially grown III-V semiconductor nanowires aimed at improving our understanding of and knowledge on the growth mechanism of nanowires. This is important to be able to control their growth, in order to make future applications possible. LÄS MER

  4. 24. Optical properties of novel semiconductor nanostructures

    Författare :Stanislav Filippov; Irina Buyanova; Weimin Chen; Galia Pozina; Linköpings universitet; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY;

    Sammanfattning : Semiconductor nanostructures, such as one-dimensional nanowires (NWs) and zerodimensional quantum dots (QDs), have recently gained increasing interest due to their unique physical properties that are found attractive for a wide variety of applications ranging from gas sensing and spintronics to optoelectronics and photonics. Here, especially promising are nanostructures based on compound semiconductors, including ZnO, GaNP and GaAs/InAs. LÄS MER

  5. 25. Micro-photoluminescence and micro-Raman spectroscopy of novel semiconductor nanostructures

    Författare :Stanislav Filippov; Irina Buyanova; Weimin Chen; M. Godlewski; Linköpings universitet; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY;

    Sammanfattning : Low-dimensional semiconductor structures, such as one-dimensional nanowires (NWs) and zerodimensional quantum dots (QDs), are materials with novel fundamental physical properties and a great potential for a wide range of nanoscale device applications. Here, especially promising are direct bandgap II-VI and III-V compounds and related alloys with a broad selection of compositions and band structures. LÄS MER