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Visar resultat 1 - 5 av 32 avhandlingar som matchar ovanstående sökkriterier.

  1. 1. Top-down Fabrication Technologies for High Quality III-V Nanostructures

    Författare :Shagufta Naureen; Srinivasan Anand; Clivia M. Sotomayor Torres; KTH; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; III-V nanostructures; colloidal lithography; top-down fabrication; dry etching; quantum well; multilayer structures; nanowires; nanopillars; nanodisks; mono-layer etching; surface passivation; photoluminescence; carrier life time; total reflectivity; photonic crystals; nanomesh;

    Sammanfattning : III-V nanostructures have attracted substantial research effort due to their interesting physical properties and their applications in new generation of ultrafast and high efficiency nanoscale electronic and photonic components. The advances in nanofabrication methods including growth/synthesis have opened up new possibilities of realizing one dimensional (1D) nanostructures as building blocks of future nanoscale devices. LÄS MER

  2. 2. Surface modification of III-V nanostructures studied by low-temperature scanning tunneling microscopy

    Författare :Yi Liu; NanoLund: Centre for Nanoscience; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; STM; XPS; semiconductor surface; III-V; nanostructure modification; nanowires; self-selective formation; atomic scale imaging; Bi incorporation; Fysicumarkivet A:2022:Liu;

    Sammanfattning : In the past decade, driven by the demand for materials with high performance for next-generation semiconductor devices (e.g. LÄS MER

  3. 3. Zeeman Interaction in Low-Dimensional III-V Semiconductor Structures

    Författare :Bernhard Kowalski; Fasta tillståndets fysik; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; optically detected spin resonance; spin resonance; effective g-value; III-V semiconductors; low-dimensional structures; quantum wells; quantum dots; Stranski-Krastanow; photoluminescence; GaInAs; single dot Magneto-luminescence; Fysicumarkivet A:1997:Kowalski; Halvledarfysik; Semiconductory physics; GaInAs-InP;

    Sammanfattning : The Zeeman interaction in low-dimensional III-V semiconductor nanostructures is studied. The effective g-value of bulk InGaAs is measured by two different spin resonance techniques. Experimental conditions were found to control the Overhauser effect, thus enabling a highly accurate determination of the g-value, g* = -4.070 ± 0. LÄS MER

  4. 4. In-situ Study of the Growth, Composition and Morphology of III-V Semiconductor Nanowires

    Författare :Robin Sjökvist; NanoLund: Centre for Nanoscience; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES; Nanowire; Semiconductor; III-V; Transmission Electron Microscopy; In-situ; Environmental TEM; Crystal growth;

    Sammanfattning : It is widely known that nanoparticle seeded growth of III-V semiconductor nanowires often occurs via the vapor-liquid-solid mechanism. However, conventional growth of nanowires is carried out in closed systems, where mostof the details and dynamics of the growth are impossible to follow. LÄS MER

  5. 5. Epitaxial growth, processing and characterisation of III-V semiconductor micro- and nanostructures

    Författare :Otto Zsebök; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; micromapping; MBE; dry etching; III-V semiconductor; processing; alternative precursor; SEM; photoluminescence; quantum wire; self-narrowing etching; wet chemical etching; MOVPE;

    Sammanfattning : .... LÄS MER