Sökning: "III-V nanostructures"

Visar resultat 1 - 5 av 25 avhandlingar innehållade orden III-V nanostructures.

  1. 1. Top-down Fabrication Technologies for High Quality III-V Nanostructures

    Detta är en avhandling från Stockholm : KTH Royal Institute of Technology

    Författare :Shagufta Naureen; Srinivasan Anand; Clivia M. Sotomayor Torres; [2013]
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; III-V nanostructures; colloidal lithography; top-down fabrication; dry etching; quantum well; multilayer structures; nanowires; nanopillars; nanodisks; mono-layer etching; surface passivation; photoluminescence; carrier life time; total reflectivity; photonic crystals; nanomesh;

    Sammanfattning : III-V nanostructures have attracted substantial research effort due to their interesting physical properties and their applications in new generation of ultrafast and high efficiency nanoscale electronic and photonic components. The advances in nanofabrication methods including growth/synthesis have opened up new possibilities of realizing one dimensional (1D) nanostructures as building blocks of future nanoscale devices. LÄS MER

  2. 2. Zeeman Interaction in Low-Dimensional III-V Semiconductor Structures

    Detta är en avhandling från Solid State Physics, Lund University

    Författare :Bernhard Kowalski; [1997]
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; optically detected spin resonance; spin resonance; effective g-value; III-V semiconductors; low-dimensional structures; quantum wells; quantum dots; Stranski-Krastanow; photoluminescence; GaInAs; single dot Magneto-luminescence; Fysicumarkivet A:1997:Kowalski; Halvledarfysik; Semiconductory physics; GaInAs-InP;

    Sammanfattning : The Zeeman interaction in low-dimensional III-V semiconductor nanostructures is studied. The effective g-value of bulk InGaAs is measured by two different spin resonance techniques. Experimental conditions were found to control the Overhauser effect, thus enabling a highly accurate determination of the g-value, g* = -4.070 ± 0. LÄS MER

  3. 3. Epitaxial growth, processing and characterisation of III-V semiconductor micro- and nanostructures

    Detta är en avhandling från Solid State Physics, Lund University

    Författare :Otto Zsebök; [1997]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; micromapping; MBE; dry etching; III-V semiconductor; processing; alternative precursor; SEM; photoluminescence; quantum wire; self-narrowing etching; wet chemical etching; MOVPE;

    Sammanfattning : .... LÄS MER

  4. 4. Synchrotron X-ray based characterization of technologically relevant III-V surfaces and nanostructures

    Detta är en avhandling från Lund University , Department of physics

    Författare :Andrea Troian; [2019-03]
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; synchrotron radiation; III-V semiconductors; high-k oxides; passivation; doping; XPS; AP-XPS; SPEM; XRF; full field X-ray diffraction microscopy; Fysicumarkivet A:2019:Troian;

    Sammanfattning : Innovative design and materials are needed to satisfy the demand for efficient and scalable devices for electronic and opto-electronic applications, such as transistors, LEDs, and solar cells. Nanostructured III-V semiconductors are an appealing solution, combining the excellent functional properties of III-V materials with the flexibility typical of nanostructures, such as the nanowires (NWs) studied here. LÄS MER

  5. 5. Dynamics of a Droplet that Assists III-V Nanowire Growth

    Detta är en avhandling från Department of Physics, Lund University

    Författare :Marcus Tornberg; [2020-04]
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Crystal growth; III-V semiconductor nanowires; Environmental transmission electron mircoscopy; MOCVD; X-ray energy-dispersive spectroscopy; Fysicumarkivet A:2020:Tornberg;

    Sammanfattning : Control of the process of crystal growth has for decades been achieved by addressing the growth temperature and material supply of the growth species. Directional control of both crystal growth and etching has, for example, been achieved by utilizing a liquid droplet to assist the process. LÄS MER