Sökning: "III-V nanostructures"

Visar resultat 1 - 5 av 22 avhandlingar innehållade orden III-V nanostructures.

  1. 1. Top-down Fabrication Technologies for High Quality III-V Nanostructures

    Detta är en avhandling från Stockholm : KTH Royal Institute of Technology

    Författare :Shagufta Naureen; KTH.; [2013]
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; III-V nanostructures; colloidal lithography; top-down fabrication; dry etching; quantum well; multilayer structures; nanowires; nanopillars; nanodisks; mono-layer etching; surface passivation; photoluminescence; carrier life time; total reflectivity; photonic crystals; nanomesh;

    Sammanfattning : III-V nanostructures have attracted substantial research effort due to their interesting physical properties and their applications in new generation of ultrafast and high efficiency nanoscale electronic and photonic components. The advances in nanofabrication methods including growth/synthesis have opened up new possibilities of realizing one dimensional (1D) nanostructures as building blocks of future nanoscale devices. LÄS MER

  2. 2. Zeeman Interaction in Low-Dimensional III-V Semiconductor Structures

    Detta är en avhandling från Solid State Physics, Lund University

    Författare :Bernhard Kowalski; Lund University.; Lunds universitet.; [1997]
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; optically detected spin resonance; spin resonance; effective g-value; III-V semiconductors; low-dimensional structures; quantum wells; quantum dots; Stranski-Krastanow; photoluminescence; GaInAs; single dot Magneto-luminescence; Fysicumarkivet A:1997:Kowalski; Halvledarfysik; Semiconductory physics; GaInAs-InP;

    Sammanfattning : The Zeeman interaction in low-dimensional III-V semiconductor nanostructures is studied. The effective g-value of bulk InGaAs is measured by two different spin resonance techniques. Experimental conditions were found to control the Overhauser effect, thus enabling a highly accurate determination of the g-value, g* = -4.070 ± 0. LÄS MER

  3. 3. Synchrotron X-ray based characterization of technologically relevant III-V surfaces and nanostructures

    Detta är en avhandling från Lund University , Department of physics

    Författare :Andrea Troian; Lund University.; Lunds universitet.; Lund University.; Lunds universitet.; [2019-03]
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; synchrotron radiation; III-V semiconductors; high-k oxides; passivation; doping; XPS; AP-XPS; SPEM; XRF; full field X-ray diffraction microscopy; Fysicumarkivet A:2019:Troian;

    Sammanfattning : Innovative design and materials are needed to satisfy the demand for efficient and scalable devices for electronic and opto-electronic applications, such as transistors, LEDs, and solar cells. Nanostructured III-V semiconductors are an appealing solution, combining the excellent functional properties of III-V materials with the flexibility typical of nanostructures, such as the nanowires (NWs) studied here. LÄS MER

  4. 4. Realization of Complex III-V Nanoscale Heterostructures

    Detta är en avhandling från Lund University , Department of physics

    Författare :Sepideh Gorji; Lund University.; Lunds universitet.; [2014]
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Fysicumarkivet A:2014:Gorji Ghalamestani;

    Sammanfattning : Low-dimensional III-V semiconductor nanoscale structures grown by epitaxial processes have emerged as a new class of materials with great promise for various device applications. This thesis describes explorations into the heteroepitaxial growth of III-V semiconductor materials in combination with other III-V materials and in combination with the commonly used Si material, in both thin layer and nanowire geometries. LÄS MER

  5. 5. Scanning Tunneling Microscopy Induced Luminescence Studies of Semiconductor Nanostructures

    Detta är en avhandling från Division of Solid State Physics, Department of Physics, Lund University, Box 118, SE-221 00 Lund, Sweden

    Författare :Ulf Håkanson; Lund University.; Lunds universitet.; [2003]
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; transmission electron microscopy TEM ; III-V semiconductors; low-dimensional structures; nanostructures; single dot spectroscopy; Stranski-Krastanow; quantum dot QD ; Semiconductory physics; polarization; ordering; InP; GaInP; photon mapping; scanning tunneling microscopy STM ; scanning tunneling luminescence STL ; Halvledarfysik; Fysicumarkivet A:2003:Håkanson;

    Sammanfattning : This thesis treats scanning tunneling luminescence (STL) investigations of semiconductor nanostructures. The STL technique combines scanning tunneling microscopy (STM) with detection of photons, induced by the tunneling electrons. The high spatial resolution in STM and the local excitation allow for optical investigations on the nanometer-scale. LÄS MER