Sökning: "III-V nanostructures"
Visar resultat 1 - 5 av 22 avhandlingar innehållade orden III-V nanostructures.
- Detta är en avhandling från Stockholm : KTH Royal Institute of Technology
Sammanfattning : III-V nanostructures have attracted substantial research effort due to their interesting physical properties and their applications in new generation of ultrafast and high efficiency nanoscale electronic and photonic components. The advances in nanofabrication methods including growth/synthesis have opened up new possibilities of realizing one dimensional (1D) nanostructures as building blocks of future nanoscale devices. LÄS MER
- Detta är en avhandling från Solid State Physics, Lund University
Sammanfattning : The Zeeman interaction in low-dimensional III-V semiconductor nanostructures is studied. The effective g-value of bulk InGaAs is measured by two different spin resonance techniques. Experimental conditions were found to control the Overhauser effect, thus enabling a highly accurate determination of the g-value, g* = -4.070 ± 0. LÄS MER
3. Synchrotron X-ray based characterization of technologically relevant III-V surfaces and nanostructuresDetta är en avhandling från Lund University , Department of physics
Sammanfattning : Innovative design and materials are needed to satisfy the demand for efficient and scalable devices for electronic and opto-electronic applications, such as transistors, LEDs, and solar cells. Nanostructured III-V semiconductors are an appealing solution, combining the excellent functional properties of III-V materials with the flexibility typical of nanostructures, such as the nanowires (NWs) studied here. LÄS MER
- Detta är en avhandling från Lund University , Department of physics
Sammanfattning : Low-dimensional III-V semiconductor nanoscale structures grown by epitaxial processes have emerged as a new class of materials with great promise for various device applications. This thesis describes explorations into the heteroepitaxial growth of III-V semiconductor materials in combination with other III-V materials and in combination with the commonly used Si material, in both thin layer and nanowire geometries. LÄS MER
- Detta är en avhandling från Division of Solid State Physics, Department of Physics, Lund University, Box 118, SE-221 00 Lund, Sweden
Sammanfattning : This thesis treats scanning tunneling luminescence (STL) investigations of semiconductor nanostructures. The STL technique combines scanning tunneling microscopy (STM) with detection of photons, induced by the tunneling electrons. The high spatial resolution in STM and the local excitation allow for optical investigations on the nanometer-scale. LÄS MER