Sökning: "III–V"

Visar resultat 1 - 5 av 63 avhandlingar innehållade ordet III–V.

1. 1. III–V Nanowire Surfaces

   Författare :Martin Hjort; NanoLund: Center for Nanoscience; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; NATURVETENSKAP; NATURAL SCIENCES; low energy electron microscopy; scanning tunneling spectroscopy; scanning tunneling microscopy; surface; III–V semiconductor materials; nanowire; photoemission electron microscopy; photoelectron spectroscopy; Fysicumarkivet A:2014:Hjort;

   Sammanfattning : This dissertation deals with the geometric and electronic structure of surfaces on III–V semiconductor nanowires (NWs). NWs made of InAs, GaAs, and InP have been studied using scanning tunneling microscopy/spectroscopy (STM/S), low energy electron microscopy (LEEM), photoemission electron microscopy (PEEM), and x-ray photoelectron spectroscopy (XPS). LÄS MER

3. 2. Aerosol Metal Nanoparticles and their Role in Particle-Assisted Growth of III–V Nanowires

   Författare :Robert Hallberg; NanoLund: Center for Nanoscience; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; aerosol formation; III–V semiconductor materials; catalyst particles; Palladium nanoparticles; Gold nanoparticles; Spark discharge generation; MOVPE; MOCVD; Transmission electron microscopy TEM ; Phase stability; Nanoparticle deposition; Nanoparticle generation; nanoparticles characterization; Nanowire NW ; Nanowire growth;

   Sammanfattning : Semiconductor nanowires have properties that make them potentially useful for applications in future electronic, photovoltaic, and optoelectronic devices. A powerful nanowire fabrication technique is the use of a nanoparticle as a preferential nucleation site, from which a nanowire grows. LÄS MER

4. 3. Growth and Characterization of Tandem-Junction Photovoltaic Nanowires

   Författare :Lukas Hrachowina; NanoLund: Center for Nanoscience; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES; III–V semiconductors; nanowire; photovoltaics; tandem junction; MOVPE; EBIC; Fysicumarkivet A:2022:Hrachowina;

   Sammanfattning : In order to satisfy the growing energy needs of our planet’s population, and at the same time mitigate global warming, sustainable energy sources such as solar energy are indispensable. In addition to conventional silicon-based solar cells, nanotechnology offers interesting approaches for complementary applications. LÄS MER

5. 4. Atomic Scale Characterization of III-V Nanowire Surfaces

   Författare :Johan Knutsson; NanoLund: Center for Nanoscience; []
   Nyckelord :III–V semiconductor materials; nanowire; surface; scanning tunneling microscopy; wurtzite; zinc blende; scanning tunneling spectroscopy; Fysicumarkivet A:2017:Knutsson;

   Sammanfattning : This dissertation focus on the atomic-scale characterization of the surface properties and electronic structure of III–V semiconductor nanowires (NWs). Since the early 2000s, the fabrication and characterization of III–V NWs has been a very significant topic within material science due to their potential for applications in lighting, energy harvesting, and electronics. LÄS MER

7. 5. Cardiopulmonary Function in Healthy Individuals and in Patients After Hematopoietic Cell Transplantation

   Författare :Margareta Genberg; Andrei Malinovschi; Eva Nylander; Uppsala universitet; []
   Nyckelord :MEDICAL AND HEALTH SCIENCES; MEDICIN OCH HÄLSOVETENSKAP; hematopoietic stem cell transplantation; echocardiography; cardiopulmonary execise testing; stress testing; onchology; childhood leukemia; healthy adults; breathing reserve; oxygen uptake; Clinical Physiology; Klinisk fysiologi;

   Sammanfattning : Background: The cardiopulmonary exercise test (CPET) is the gold standard of clinical exercise tests, combining conventional stress testing with measurement of oxygen uptake and carbon dioxide production. In order to interpret CPET findings, adequate reference values are needed. Currently, no Swedish reference values exist. LÄS MER