Sökning: "High resolution x-ray diffraction HRXRD"
Hittade 5 avhandlingar innehållade orden High resolution x-ray diffraction HRXRD.
1. Application of SiGe(C) in high performance MOSFETs and infrared detectors
Sammanfattning : Epitaxially grown SiGe(C) materials have a great importance for many device applications. In these applications, (strained or relaxed) SiGe(C) layers are grown either selectively on the active areas, or on the entire wafer. LÄS MER
2. Epitaxy and characterization of SiGeC layers grown by reduced pressure chemical vapor deposition
Sammanfattning : Heteroepitaxial SiGeC layers have attracted immenseattention as a material for high frequency devices duringrecent years. The unique properties of integrating carbon inSiGe are the additional freedom for strain and bandgapengineering as well as allowing more aggressive device designdue to the potential for increased thermal budget duringprocessing. LÄS MER
3. Device design and process integration for SiGeC and Si/SOI bipolar transistors
Sammanfattning : SiGe is a significant enabling technology for therealization of integrated circuits used in high performanceoptical networks and radio frequency applications. In order tocontinue to fulfill the demands for these applications, newmaterials and device structures are needed. LÄS MER
4. GaN, AlGaN, GaNAs and Related Heterostructures Grown by Molecular Beam Epitaxy
Sammanfattning : This work deals with growth and characterization of III-nitrides and related heterostructures as well as GaNAs alloys grown by plasma assisted molecular beam epitaxy (MBE). The III-nitrides belong to the wide bandgap semiconductors due to their large energy bandgap spanning from 1.9 to 6.2 eV. LÄS MER
5. Optical characterization of dilute nitride semiconductors and related quantum structures
Sammanfattning : Dilute nitrides (i.e. LÄS MER