Sökning: "High Resolution X-ray Diffraction HRXRD"

Hittade 5 avhandlingar innehållade orden High Resolution X-ray Diffraction HRXRD.

  1. 1. Application of SiGe(C) in high performance MOSFETs and infrared detectors

    Författare :Mohammadreza Kolahdouz Esfahani; Henry Radamson; Ya-Hong Xie; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon Germanium Carbon SiGeC ; Reduced Pressure Chemical Vapor Deposition RPCVD ; Epitaxy; Pattern Dependency; MOSFET; Mobility; bolometer; Quantum Well; Infrared IR Detection; Ni Silicide; High Resolution X-ray Diffraction HRXRD ; High Resolution Scanning Electron Microscopy HRSEM ; Electrical engineering; electronics and photonics; Elektroteknik; elektronik och fotonik;

    Sammanfattning : Epitaxially grown SiGe(C) materials have a great importance for many device applications. In these applications, (strained or relaxed) SiGe(C) layers are grown either selectively on the active areas, or on the entire wafer. LÄS MER

  3. 2. Epitaxy and characterization of SiGeC layers grown by reduced pressure chemical vapor deposition

    Författare :Julius Hållstedt; KTH; []
    Nyckelord :Silicon germanium carbon SiGeC ; Epitaxy; Chemical vapor deposition CVD ; Loading effect; High resolution x-ray diffraction HRXRD ; Hall measurements; Atomic force microscopy AFM .;

    Sammanfattning : Heteroepitaxial SiGeC layers have attracted immenseattention as a material for high frequency devices duringrecent years. The unique properties of integrating carbon inSiGe are the additional freedom for strain and bandgapengineering as well as allowing more aggressive device designdue to the potential for increased thermal budget duringprocessing. LÄS MER

  4. 3. Device design and process integration for SiGeC and Si/SOI bipolar transistors

    Författare :Erik Haralson; KTH; []
    Nyckelord :Silicon-Germanium SiGe ; SiGeC; heterojunction bipolar transistor HBT ; nickel silicide; selectively implanted collector SIC ; device simulation; SiGeC layer staiblity; high resolution x-ray diffraction HRXRD ; silicon-on.insulator SOI ; self-heating;

    Sammanfattning : SiGe is a significant enabling technology for therealization of integrated circuits used in high performanceoptical networks and radio frequency applications. In order tocontinue to fulfill the demands for these applications, newmaterials and device structures are needed. LÄS MER

  5. 4. GaN, AlGaN, GaNAs and Related Heterostructures Grown by Molecular Beam Epitaxy

    Författare :Hyonju Kim; Chalmers tekniska högskola; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; surface segregation; GaNAs; plasma-assisted MBE; stacking fault; AlGaN GaN; heterointerface; unintentional impurities; III-nitrides;

    Sammanfattning : This work deals with growth and characterization of III-nitrides and related heterostructures as well as GaNAs alloys grown by plasma assisted molecular beam epitaxy (MBE). The III-nitrides belong to the wide bandgap semiconductors due to their large energy bandgap spanning from 1.9 to 6.2 eV. LÄS MER

  7. 5. Optical characterization of dilute nitride semiconductors and related quantum structures

    Författare :Morteza Izadifard; G. Yu. Rudko; Linköpings universitet; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Dilute nitrides; optoelectronics; photonics; Optical physics; Optisk fysik;

    Sammanfattning : Dilute nitrides (i.e. LÄS MER