Sökning: "Heterostructures"
Visar resultat 21 - 25 av 144 avhandlingar innehållade ordet Heterostructures.
21. Magnetic Properties of Epitaxial Metal/Oxide Heterostructures
Sammanfattning : The work in this dissertation is devoted to tailoring and studying magnetic properties of epitaxial metal/oxide heterostructures. The aim is to understand the fundamental principles governing these properties and how they affect each other. The acquired knowledge can prove useful for the development of future spintronic devices. LÄS MER
22. Nanowire Heterostructures- Growth, Characterization and Optical Physics
Sammanfattning : This thesis describes growth, processing, characterization and photoluminescence (PL) spectroscopy of nanowire heterostructures. The nanowires were made of III-V semiconductor materials and were produced by Au-particle assisted growth. LÄS MER
23. Spin Transport in Two-Dimensional Material Heterostructures
Sammanfattning : Spintronics is considered as an alternative for information processing beyond the charge based technology. The spintronic device performance depend on the spin relaxation mechanisms in the channel material. Si and graphene are interesting for their long spin coherence lengths and ideal for spin transport channels. LÄS MER
24. Theory of Electron Transport in Superconducting Heterostructures
Sammanfattning : This thesis deals theoretically with electron transport in superconducting heterostructures. Depending on the system I use different theoretical approaches. The thesis contains an introduction followed by four research papers (Papers I-IV). The introduction gives the background of the work in Papers I-IV. LÄS MER
25. Realization of Complex III-V Nanoscale Heterostructures
Sammanfattning : Low-dimensional III-V semiconductor nanoscale structures grown by epitaxial processes have emerged as a new class of materials with great promise for various device applications. This thesis describes explorations into the heteroepitaxial growth of III-V semiconductor materials in combination with other III-V materials and in combination with the commonly used Si material, in both thin layer and nanowire geometries. LÄS MER