Sökning: "Hans Högberg"
Visar resultat 26 - 30 av 30 avhandlingar innehållade orden Hans Högberg.
26. Physical Vapor Deposition of Yttria-Stabilized Zirconia and Gadolinia-Doped Ceria Thin Films for Fuel Cell Applications
Sammanfattning : In this thesis, reactive sputter deposition of yttria-stabilized zirconia (YSZ) and cerium gadolinium oxide (CGO) thin films for solid oxide fuel cell (SOFC) applications have been studied. All films have been deposited under industrial conditions.YSZ films were deposited on silicon wafers as well as commercial NiO-YSZ fuel cell anodes. LÄS MER
27. Growth and Characterization of ZrB2 Thin Films
Sammanfattning : In this thesis, growth of ZrB2 thin films by direct current magnetron sputtering is investigatedusing a high vacuum industrial scale deposition system and an ultra-high vacuum laboratory scalesystem. The films were grown from ZrB2 compound targets at temperatures ranging from ambient (without external heating) to 900 °C and with substrate biases from -20 to -120 V. LÄS MER
28. ZrB2 Thin Films : Growth and Characterization
Sammanfattning : Zirconium diboride, ZrB2, is a ceramic material with bulk properties such as high melting point (3245 °C), high hardness (23 GPa), and low resistivity (~8 μΩcm). Thin film growth of ZrB2 using physical vapor deposition has suffered from problems with films deviating from stoichiometry and with high levels of contaminants, especially high oxygen content. LÄS MER
29. Nanocrystalline Alumina-Zirconia Thin Films Grown by Magnetron Sputtering
Sammanfattning : Alumina-zirconia thin films have been deposited using dual magnetron sputtering. Film growth was performed at relatively low-to-medium temperatures, ranging from ~300°C to 810 °C. Different substrates were applied, including silicon (100), and industrially relevant materials, such as WC-Co hardmetal. LÄS MER
30. Synthesis and Characterisation of Magnetron Sputtered Alumina-Zirconia Thin Films
Sammanfattning : Alumina-Zirconia thin films were grown on a range of substrates using dual magnetron sputtering. Film growth was achieved at a relatively low temperature of 450 °C and at higher temperatures up to 810 °C. The films were grown on well-defined surfaces such as silicon (100) but also on industrially relevant substrates such as hardmetal (WC-Co). LÄS MER