Sökning: "HEMTs"

Visar resultat 6 - 10 av 56 avhandlingar innehållade ordet HEMTs.

1. 6. Processing, Characterization and Modeling of AlGaN/GaN HEMTs

   Författare :Vincent Desmaris; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; GaN; HEMT; III-Nitride processing; microwave modeling; AlGaN GaN; HFET; heterojunction field effect transistor; microwave devices; III-Nitride; Schottky diodes; Gallium nitride; resistive mixer; high electron mobility transistor; wide bandgap;

   Sammanfattning : III-Nitrides electronic properties make them currently the materials of choice for high-power high-frequency applications. Their wide bandgaps, high breakdown fields, the high electron peak and saturation velocities combined with the large conduction band offset and the high electron mobility observed in AlGaN/GaN heterostructures enable excellent microwave power performance of AlGaN/GaN high electron mobility transistors (HEMTs). LÄS MER

3. 7. Ultra-Low Noise InP HEMTs for Cryogenic Amplification

   Författare :Joel Schleeh; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; cryogenic; DC power dissipation; MMIC; LNA; InP HEMT; ALD;

   Sammanfattning : InGaAs/InAlAs/InP High Electron Mobility Transistors (InP HEMTs), are today the best devices to design cryogenic low noise amplifiers. However, reported progress in reducing the noise has been slow in the last decade. LÄS MER

4. 8. InAs/AlSb HEMTs for Cryogenic Low-Noise Applications

   Författare :Giuseppe Moschetti; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; cryogenic; metamorphic; high frequency; high electron mobility transistor HEMT ; low power; low noise.; InAs AlSb;

   Sammanfattning : The InAs/AlSb high electron mobility transistor (HEMT) is an emerging microwave device technology. The high electron mobility and high peak electron velocity of the InAs channel makes this device technology a potential candidate for low-noise applications operating at very low power dissipation. LÄS MER

5. 9. Buffer Related Dispersive Effects in Microwave GaN HEMTs

   Författare :Johan Bergsten; Chalmers tekniska högskola; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; trapping effects; C-doping; AlGaN GaN interface quality; recessed ohmic contacts; GaN HEMT; buffer design;

   Sammanfattning : In applications such as mobile communication and radar, microwave power generation at high frequency is of utmost importance. The GaN HEMT offers a unique set of properties that makes it suitable for high power amplification at high frequencies. LÄS MER

7. 10. Processing and Characterization of AlGaN/GaN HEMTs on Sapphire

   Författare :Vincent Desmaris; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY;

   Sammanfattning : .... LÄS MER