Sökning: "HEMT"

Visar resultat 6 - 10 av 75 avhandlingar innehållade ordet HEMT.

  1. 6. Ohmic Contacts and Thin Film Resistors for GaN MMIC Technologies

    Författare :Anna Malmros; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; ohmic contact; TFR; TiN; HEMT; GaN; TaN;

    Sammanfattning : Gallium nitride (GaN) based high electron mobility transistor (HEMT) technology has attracted much attention during the last decade which has resulted in a rapid development in material quality and device performance. GaN HEMT microwave electronics are currently finding its applications in wireless communication infrastructure and radar systems. LÄS MER

  3. 7. Advanced III-Nitride Technology for mm-Wave Applications

    Författare :Anna Malmros; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; ohmic contact; passivation; InAlN; high frequency performance; GaN; InAlGaN; HEMT; electron trapping;

    Sammanfattning : Within wireless communication, there is a continuously growing need for more bandwidth due to an increasing number of users and data intense services. The development within sensor systems such as radars, is largely driven by the need for increased detection range and robustness. LÄS MER

  4. 8. Advanced Analog MMICs for mm-wave Communication and Remote Sensing in 0.15µm mHEMT Technology

    Författare :Marcus Gavell; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; GaAs; Point-To-Point; E-band; Modulators; HEMT; Receiver; microwave; Mixers; Geostationary; mm-wave;

    Sammanfattning : Multi-Gigabit per second wireless communication and atmospheric remote sensing for weather forecasts are new applications in the mm-wave frequency spectra. The High Electron Mobility Transistor is an excellent technology for high frequency mm-wave applications. Its low noise and linear performance makes a 0. LÄS MER

  5. 9. Nonlinear Modeling of FETs for Microwave Switches and Amplifiers

    Författare :Ankur Prasad; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; HEMT; symmetry; small-signal model; field-plate.; GaAs; GaN; nonlinear model; trap model; symmetrical model; trap; model;

    Sammanfattning : The exponential growth in wireless systems require rapid prototyping of radio frequency circuits (RF) using computer-aided design (CAD) enabled models. Most of the RF circuits (e.g. switches, amplifiers, mixers, etc. LÄS MER

  7. 10. Wide Bandgap Semiconductor (SiC & GaN) Power Amplifiers in Different Classes

    Författare :Sher Azam; Qamar Wahab; Jörgen Olsson; Linköpings universitet; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Wide bandgap; SiC; MESFET; GaN; HEMT; Power Amplifiers; Materials science; Teknisk materialvetenskap;

    Sammanfattning : SiC MESFETs and GaN HEMTs have an enormous potential in high-power amplifiers at microwave frequencies due to their wide bandgap features of high electric breakdown field strength, high electron saturation velocity and high operating temperature. The high power density combined with the comparably high impedance attainable by these devices also offers new possibilities for wideband power microwave systems. LÄS MER