Sökning: "HEMT"

Visar resultat 16 - 20 av 75 avhandlingar innehållade ordet HEMT.

  1. 16. Nonlinear transistor models for microwave and millimeterwave circuits

    Författare :Lars Bengtsson; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; non-linear model; MESFET; volterra series; HBT; nonlinear simulation; HEMT; BJT; HFET; physical model; power spectrum measurement; harmonic balance;

    Sammanfattning : .... LÄS MER

  3. 17. Processing, Characterization and Modeling of AlGaN/GaN HEMTs

    Författare :Vincent Desmaris; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; GaN; HEMT; III-Nitride processing; microwave modeling; AlGaN GaN; HFET; heterojunction field effect transistor; microwave devices; III-Nitride; Schottky diodes; Gallium nitride; resistive mixer; high electron mobility transistor; wide bandgap;

    Sammanfattning : III-Nitrides electronic properties make them currently the materials of choice for high-power high-frequency applications. Their wide bandgaps, high breakdown fields, the high electron peak and saturation velocities combined with the large conduction band offset and the high electron mobility observed in AlGaN/GaN heterostructures enable excellent microwave power performance of AlGaN/GaN high electron mobility transistors (HEMTs). LÄS MER

  4. 18. Microwave FET Modeling and Applications

    Författare :Christian Fager; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; MESFET; uncertainty; model; FMCW; statistical; HEMT; small-signal; extraction; distortion; intermodulation; CMOS; LDMOS; power amplifier; estimation; FET; large-signal; radar; AM noise;

    Sammanfattning : This thesis deals with three distinct topics within the areas of modeling, analysis and circuit design with microwave field effect transistors (FETs). First, the extraction of FET small-signal model parameters is addressed. LÄS MER

  5. 19. Experimentally Based HFET Modeling for Microwave and Millimeter Wave Applications

    Författare :Mikael Garcia; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; MODFET; soft-breakdown; cold FET; large-signal; source balance; SDHT; dispersion; noise figure; temperature noise model; small-signal; TEGFET; direct extraction; Chalmers model; noise parameters; modeling; HEMT; HFET; noise;

    Sammanfattning : Transistor models are very important in the design of Monolithic Microwave Integrated Circuits (MMICs). Circuit simulations based on accurate transistor models are one of the keys to high circuit yield. Transistor models can also be used to trace problems in the device fabrication processes. LÄS MER

  7. 20. Small-signal, large-signal and noise modelling of HEMTs

    Författare :Mikael Garcia; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; small-signal equivalent circuit; direct extraction; L-network; MMIC_lib; noise model; TRL-calibration; -nerwork; ninlinear model; HEMT; HFET; Y-factor measurement; #928; coldFET measurement; method; power-spectrum measurement;

    Sammanfattning : .... LÄS MER