Sökning: "HEMT transistor"

Visar resultat 1 - 5 av 41 avhandlingar innehållade orden HEMT transistor.

1. 1. Nonlinear transistor models for microwave and millimeterwave circuits

   Författare :Lars Bengtsson; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; non-linear model; MESFET; volterra series; HBT; nonlinear simulation; HEMT; BJT; HFET; physical model; power spectrum measurement; harmonic balance;

   Sammanfattning : .... LÄS MER

3. 2. Processing, Characterization and Modeling of AlGaN/GaN HEMTs

   Författare :Vincent Desmaris; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; GaN; HEMT; III-Nitride processing; microwave modeling; AlGaN GaN; HFET; heterojunction field effect transistor; microwave devices; III-Nitride; Schottky diodes; Gallium nitride; resistive mixer; high electron mobility transistor; wide bandgap;

   Sammanfattning : III-Nitrides electronic properties make them currently the materials of choice for high-power high-frequency applications. Their wide bandgaps, high breakdown fields, the high electron peak and saturation velocities combined with the large conduction band offset and the high electron mobility observed in AlGaN/GaN heterostructures enable excellent microwave power performance of AlGaN/GaN high electron mobility transistors (HEMTs). LÄS MER

4. 3. InP HEMT Technology and Applications

   Författare :Anders Mellberg; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Indium phosphide InP ; cryogenic LNA; high electron mobility transistor HEMT ; metal-insulator-metal capacitor; MODFET; thin film resistor; semiconductor device fabrication; MMIC;

   Sammanfattning : Indium phosphide high electron mobility transistors (InGaAs/InAlAs/InP HEMTs) exhibit the highest cut-off frequencies and the lowest microwave noise figures of all transistor technologies. Both InP HEMT technology and associated circuit demonstrators are therefore interesting to explore further. LÄS MER

5. 4. Low phase noise voltage controlled micro- and millimeter wave oscillators

   Författare :Stefan Andersson; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; radio; anti series; microstrip resonator; silicon bipolar transistor; amplitude limiter; cavity resonator; varactor; transposed gain; MESFET; automatic gain control; VCO; delay line; laser; RF; oscillation criteria; millimetre wave; oscillator; mm-wave; noise; multiplier; fibre optic; SAW; DRO; PLL; surface acoustic wave; Si BJT; 1 f noise; FM noise; HEMT; clipping diode; HBT; YIG sphere; device; terfenol; gunn diode; stabilised; YIG film; quarts crystal; phase locked loop; magnetostrictive; resonator; phase error; whispering gallery mode; sapphire resonator; Fabry-Perot resonator; PHEMT; microwave; HFET; phase noise; DR; dielectric resonator; PM noise; balanced oscillator; piezo electric; AGC; frequency discriminator;

   Sammanfattning : .... LÄS MER

7. 5. Low-Power HEMT LNAs for Quantum Computing

   Författare :Yin Zeng; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; low-noise amplifier; qubit; Cryogenic; InP HEMT.; quantum computing; low-power;

   Sammanfattning : The rapid development of quantum computing technology predicts much more qubits to handle in the detection, readout, and amplification of qubits than in today's system. Due to the limited cooling capability of the dilution refrigerator, the current low-noise amplifiers (LNAs) are in need of ten to hundred times reduced dc power consumption yet with lowest noise temperature at qubit readout frequencies, typcially 4-12 GHz. LÄS MER