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1. 1. InP DHBT Amplifiers and Circuit Packaging up to Submillimeter-Wave Frequencies

   Författare :Klas Eriksson; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; InP; WR05; packaging; noise figure; substrate modes; WR03.; multiple layer interconnect; double heterojunction bipolar transistor DHBT ; G-band; wideband; H-band; waveguide transition; distributed amplifier DA ; millimeter-wave; amplifier; low-noise amplifier LNA ; membrane technology; waveguide module; submillimeter-wave;

   Sammanfattning : This thesis treats the design and characterization of amplifiers operating up tosubmillimeter-wave frequencies and packaging of such circuits into waveguidemodules. The circuits use an advanced indium phosphide (InP) double heterojunctionbipolar transistor (DHBT) process with a multilayer back-end. LÄS MER