Sökning: "Ge Ilands"

Hittade 1 avhandling innehållade orden Ge Ilands.

1. 1. UHV-CVD growth of Ge/Si nanostructures

   Författare :Vilma Zela; Fasta tillståndets fysik; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Semiconductory physics; Fysik; Physics; Naturvetenskap; Si; Ge; Esaki diode; Halvledarfysik; Ge layer; Natural science; Ge Ilands; posiotioning;

   Sammanfattning : This thesis is based on the results concerning the epitaxial growth and characterization of silicon (Si) and germanium (Ge) nanostructures. The growth technique was the Ultra High Vacuum Chemical Vapor Deposition (UHV-CVD) that works in relatively low temperatures and low growth pressures. LÄS MER