Sökning: "GaInP"

Visar resultat 11 - 15 av 24 avhandlingar innehållade ordet GaInP.

1. 11. GaP and GaInP nanowires as model particles for in vivo fiber toxicity studies

   Författare :Karl Adolfsson; Fasta tillståndets fysik; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; MEDICIN OCH HÄLSOVETENSKAP; MEDICAL AND HEALTH SCIENCES; Fluorescent Nanowires; Fiber Toxicity; Drosophila melanogaster; Daphnia magna; Fysicumarkivet A:2017:Adolfsson;

   Sammanfattning : .... LÄS MER

3. 12. MOVPE Growth and Characterization of Low-Dimensional III-V Semiconductor Structures

   Författare :Niclas Carlsson; Fasta tillståndets fysik; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Semiconductory physics; low-dimensional structures; metalorganic vapour phase epitaxy; quantum wells; self-assembled dots; quantum dots; Fysicumarkivet A:1998:Carlsson; Halvledarfysik;

   Sammanfattning : Metalorganic vapour phase epitaxy is used for growth of low-dimensional III-V semiconductor structures. The roughness of heterointerfaces in GaAs/GaInP quantum well structures is studied by photoluminescence emission from extremely narrow quantum wells. LÄS MER

4. 13. Densities and Sizes of Self-assembled Quantum Dots Grown by MOVPE

   Författare :Jonas Johansson; Fasta tillståndets fysik; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Self-assembled quantum dots; Metal organic vapour phase epitaxy; Physics; Stranski-Krastanow; Fysicumarkivet 2000:Johansson; Halvledarfysik; Semiconductory physics; Fysik;

   Sammanfattning : This thesis is based on results concerning the formation of semiconductor self-assembled quantum dots. The quantum dots have been grown by metal organic vapour phase epitaxy in the Stranski-Krastanow growth mode. LÄS MER

5. 14. Epitaxial III-V/Si heterojunctions for photonic devices

   Författare :Giriprasanth Omanakuttan; Sebastian Lourdudoss; Yanting Sun; Harri Lipsanen; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; epitaxy; heterojunction; III-V on Si integration; solar cell; Fysik; Physics;

   Sammanfattning : Monolithic integration of III-V materials on silicon is of great interest for efficient electronic-photonic integrated devices and multijunction solar cells on silicon. However, defect formation in the heteroepitaxial layers due to lattice mismatch, thermal mismatch, and polarity mismatch makes it a great challenge. LÄS MER

7. 15. Resonant Tunneling in Laterally Confined Quantum Structures

   Författare :Boel Gustafson; Fasta tillståndets fysik; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; gravitation; relativity; quantum mechanics; classical mechanics; Mathematical and general theoretical physics; Fysik; Physics; High peak-to-valley ratio; Lateral confinement; Quantum dots; Resonant tunneling; Self-assembled quantum dots; Schottky depletion; Buried metal gate; Electron transport; Magnetic-field dependence; Energy level width; Tunneling transistors; Mode coupling; statistical physics; thermodynamics; Matematisk och allmän teoretisk fysik; klassisk mekanik; kvantmekanik; relativitet; statistisk fysik; termodynamik; Technological sciences; Teknik; Fysicumarkivet A:2001:Gustafson;

   Sammanfattning : In the thesis, three-dimensionally confined resonant tunneling structures were studied experimentally. Two approaches were used for obtaining quantum confinement: gate-defined lateral constriction of double barrier structures, and epitaxial growth of self-assembled quantum dots. LÄS MER