Sökning: "GaInAs"
Visar resultat 6 - 9 av 9 avhandlingar innehållade ordet GaInAs.
6. MOVPE Growth and Characterization of Low-Dimensional III-V Semiconductor Structures
Sammanfattning : Metalorganic vapour phase epitaxy is used for growth of low-dimensional III-V semiconductor structures. The roughness of heterointerfaces in GaAs/GaInP quantum well structures is studied by photoluminescence emission from extremely narrow quantum wells. LÄS MER
7. Low and High Energy Ion Beams in Nanotechnology
Sammanfattning : In this thesis, two ways of fabrication of nanometer-sized semiconductor features are presented. Low Energy Ion Implantation (LEII) has been used to create shallow (sub-50 nm) and laterally small (5 m m – 200 nm) features by 10 keV As+ doping of B background doped Si. LÄS MER
8. Studies of Novel Nanostructures by Cross- sectional Scanning Tunneling Microscopy
Sammanfattning : This thesis presents structural and morphological studies of semiconductor nanostructures, namely quantum dots, nanowires and a dilute ferromagnetic semiconductor. These nanostructures are investigated on the atomic scale using cross-sectional scanning tunneling microscopy (XSTM). LÄS MER
9. Long-wavelength vertical-cavity lasers based on InP/GaInAsp bragg reflectors
Sammanfattning : Vertical-cavity surface-emitting lasers (VCSELs) operatingat long wavelength (1.3-1.55µm) are of great interest asinexpensive, high-performance light sources for opticalcommunication systems. LÄS MER