Sökning: "GaAs AlGaAs"

Visar resultat 1 - 5 av 29 avhandlingar innehållade orden GaAs AlGaAs.

  1. 1. DX Centers in AlGaAs

    Detta är en avhandling från Department of Solid State Physics, Lund University, Box 118, S-221 00 Lund, Sweden

    Författare :Yingbo Jia; [1996]
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; DX center; AlGaAs; GaAs AlGaAs multi-layer structures; C-V; DLTS; electric field dependence; positive-U and negative-U models; Schottky diodes; Halvledarfysik; Fysicumarkivet A:1996:Jia; Semiconductory physics; silicon; metastable states.;

    Sammanfattning : This thesis presents a study of DX center related phenomena in silicon doped AlGaAs and in GaAs/AlGaAs multi-layer structures. A variety of experimental techniques such as capacitance-voltage (C-V), deep level transient spectroscopy (DLTS), single shot capacitance, thermally stimulated capacitance (TSCAP), admittance spectroscopy, photocapacitance, and photoconductivity have been used. LÄS MER

  2. 2. Spectroscopic studies of III-V semiconductors in two, one and zero dimensions

    Detta är en avhandling från Solid State Physics, Lund University

    Författare :Dan Hessman; Lund University.; Lunds universitet.; [1996]
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; InAs-InP; low-dimensional structures; quantum wells; quantum dots; quantum wires; k.p calculations; type-II; photoluminescence; V grooves; Stranski Krastanow; single dot spectroscopy; GaAs-InP; III-V semiconductors; Fysicumarkivet A:1996:Hessman; InAs-GaAs; GaInAs-InP; Halvledarfysik; InP-GaInP; Semiconductory physics;

    Sammanfattning : In this thesis, spectroscopic studies of quantum wells (QWs), quantum wires (QWRs) and quantum dots (QDs) in III-V semiconductors are presented. The electronic structure of these low-dimensional structures have been studied by absorption, photocurrent, electroreflectance, photoluminescence (PL), and photoluminescence excitation (PLE) spectroscopy. LÄS MER

  3. 3. Gallium arsenide based buried heterostructure laser diodes with aluminium-free semi-insulating materials regrowth

    Detta är en avhandling från Kista : Mikroelektronik och informationsteknik

    Författare :Carlos Angulo Barrios; KTH.; [2002]
    Nyckelord :semiconductor lasers; in-plane lasers; VCSELs; GaAs; GaInP; semi-insulating materials; hydride vapour phase epitaxy; regrowth; buried heterostructure; leakage current; simulation;

    Sammanfattning : Semiconductor lasers based on gallium arsenide and relatedmaterials are widely used in applications such as opticalcommunication systems, sensing, compact disc players, distancemeasurement, etc. The performance of these lasers can beimproved using a buried heterostructure offering lateralcarrier and optical confinement. LÄS MER

  4. 4. Electron Scattering Mechanisms in Low-Dimensional Transport Physics

    Detta är en avhandling från Solid State Physics, Lund University

    Författare :Qin Wang; [1999]
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; electron scattering mechanisms; mobility; scattering time; Coulomb scattering; alloy scattering; edge states; quantum Hall effect; SdH; conductance oscillations; quantized conductance; GaInAs InP; Low-dimensional structures; GaAs AlGaAs; Physics; Fysik; Fysicumarkivet A:1999:Wang;

    Sammanfattning : Electron scattering mechanisms in low-dimensional semiconductor systems have been investigated at low temperatures. The influence of scatterers on magnetotransport in a high-mobility, GaAs/AlGaAs two-dimensional electron gas (2DEG) system was studied. LÄS MER

  5. 5. Tunneling Based Electronic Devices

    Detta är en avhandling från Solid State Physics, Lund University

    Författare :Erik Lind; Lund University.; Lunds universitet.; Lund University.; Lunds universitet.; [2004]
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; SiGe; Esaki Diodes; classical mechanics; quantum mechanics; relativity; termodynamik; relativitet; kvantmekanik; statistisk fysik; Matematisk och allmän teoretisk fysik; thermodynamics; gravitation; statistical physics; GaAs; Mathematical and general theoretical physics; Resonant Tunneling Permeable Base Transistors; Resonant Tunneling Diodes; klassisk mekanik; Fysicumarkivet A:2004:Lind;

    Sammanfattning : This thesis concerns different kinds of tunneling based devices all showing negative differential resistance. The thesis is divided in three parts, resonant tunneling transistors, Esaki diodes and coupled zero dimensional systems. LÄS MER