Sökning: "GaAs AlGaAs"

Visar resultat 1 - 5 av 41 avhandlingar innehållade orden GaAs AlGaAs.

  1. 1. Spectroscopic studies of III-V semiconductors in two, one and zero dimensions

    Författare :Dan Hessman; Fasta tillståndets fysik; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; InAs-InP; low-dimensional structures; quantum wells; quantum dots; quantum wires; k.p calculations; type-II; photoluminescence; V grooves; Stranski Krastanow; single dot spectroscopy; GaAs-InP; III-V semiconductors; Fysicumarkivet A:1996:Hessman; InAs-GaAs; GaInAs-InP; Halvledarfysik; InP-GaInP; Semiconductory physics;

    Sammanfattning : In this thesis, spectroscopic studies of quantum wells (QWs), quantum wires (QWRs) and quantum dots (QDs) in III-V semiconductors are presented. The electronic structure of these low-dimensional structures have been studied by absorption, photocurrent, electroreflectance, photoluminescence (PL), and photoluminescence excitation (PLE) spectroscopy. LÄS MER

  2. 2. Gallium arsenide based buried heterostructure laser diodes with aluminium-free semi-insulating materials regrowth

    Författare :Carlos Angulo Barrios; KTH; []
    Nyckelord :semiconductor lasers; in-plane lasers; VCSELs; GaAs; GaInP; semi-insulating materials; hydride vapour phase epitaxy; regrowth; buried heterostructure; leakage current; simulation;

    Sammanfattning : Semiconductor lasers based on gallium arsenide and relatedmaterials are widely used in applications such as opticalcommunication systems, sensing, compact disc players, distancemeasurement, etc. The performance of these lasers can beimproved using a buried heterostructure offering lateralcarrier and optical confinement. LÄS MER

  3. 3. Tunneling Based Electronic Devices

    Författare :Erik Lind; Institutionen för elektro- och informationsteknik; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; SiGe; Esaki Diodes; classical mechanics; quantum mechanics; relativity; termodynamik; relativitet; kvantmekanik; statistisk fysik; Matematisk och allmän teoretisk fysik; thermodynamics; gravitation; statistical physics; GaAs; Mathematical and general theoretical physics; Resonant Tunneling Permeable Base Transistors; Resonant Tunneling Diodes; klassisk mekanik; Fysicumarkivet A:2004:Lind;

    Sammanfattning : This thesis concerns different kinds of tunneling based devices all showing negative differential resistance. The thesis is divided in three parts, resonant tunneling transistors, Esaki diodes and coupled zero dimensional systems. LÄS MER

  4. 4. Linear and Nonlinear Transport in Quantum Nanostructures

    Författare :Anneli Löfgren; Fasta tillståndets fysik; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; magnetoconductance; mesoscopic; electron billiard; quantum dot; quantum ratchets; non-linear; symmetries; non-symmetric conduction; rectification; artificial material; Halvledarfysik; Fysicumarkivet A:2002:Löfgren; ballistic transport; quantum transport; 2DEG; Semiconductory physics; InP InGaAs; GaAs AlGaAs;

    Sammanfattning : In this thesis, electron transport in mesoscopic semiconductor nanostructures, in particular so-called electron billiards or quantum dots, is studied. The thesis can be divided into two areas: the linear response regime of transport, and the nonlinear response regime of transport. LÄS MER

  5. 5. Nanoelectronic Devices Based on Low-Dimensional Semiconductor Structures

    Författare :Daniel Wallin; Fasta tillståndets fysik; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; InGaAs InP; GaAs AlGaAs; ballistic transport; quantum transport; low-dimensional structures; two-dimensional electron gas; quantum dot; three terminal ballistic junction; nanowire;

    Sammanfattning : The present thesis reports on results from the fabrication technology development and the corresponding electrical transport measurements of low-dimensional semiconductor structures. The focus of the work has been directed towards two parts: the ballistic transport in nanostructure devices at room temperature, and the development of a charge-sensing technique for quantum dots (QD) in nanowires. LÄS MER