Sökning: "GMR"

Visar resultat 1 - 5 av 9 avhandlingar innehållade ordet GMR.

1. 1. Ion Tracks for Micro- and Nanofabrication : From Single Channels to Superhydrophobic Surfaces

   Författare :Reimar Spohr; Lars Westerberg; Lars Montelius; Uppsala universitet; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Ion track; single ion; real time; phase detection; conductometric cell; conductometry; electro replication; microtechnology; nanotechnology; surfactant; self organization; GMR; magnetic; sensor technology; hydrophobic; tilted texture.; Physics; Fysik; Materialvetenskap; Materials Science;

   Sammanfattning : A method is described for preset-count irradiations between 1 and 100 ions singling-out individual ions from an ion beam with more than a billion ions arriving per second. The ion tracks are etched in a conductometric system with real-time evaluation of the acquired data. The etch process can be interrupted when reaching a preset channel diameter. LÄS MER

3. 2. Charge carrier transport in field-effect transistors with two-dimensional electron gas channels studied using geometrical magnetoresistance effect

   Författare :Isabel Harrysson Rodrigues; Chalmers tekniska högskola; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES; low-field mobility; high-electron-mobility transistor; velocity saturation; quasi-ballistic charge carrier transport; two-dimensional electron gas; charge carrier scattering mechanisms; geometrical magnetoresistance; low noise and high frequency applications; velocity peak; graphene field-effect transistor; charge carrier trans- port;

   Sammanfattning : During the last decades, significant efforts have been made to exploit the excellent and promising electronic properties exhibited by field-effect transistors (FETs) with two-dimensional electron gas (2DEG) channels. The most prominent representatives of this class of devices are high-electron-mobility transistors (HEMTs) and graphene field-effect transistors (GFETs). LÄS MER

4. 3. CMOS High Frequency Circuits for Spin Torque Oscillator Technology

   Författare :Tingsu Chen; Ana Rusu; Jerzy Dabrowski; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; microwave integrated circuit; CMOS; spin torque oscillator; Balun-LNA; wideband amplifier; on-chip bias-tee; multi-standard multi-band radios;

   Sammanfattning : Spin torque oscillator (STO) technology has a unique blend of features, including but not limited to octave tunability, GHz operating frequency, and nanoscaled size, which makes it highly suitable for microwave and radar applications. This thesis studies the fundamentals of STOs, utilizes the state-of-art STO's advantages, and proposes two STO-based microwave systems targeting its microwave applications and measurement setup, respectively. LÄS MER

5. 4. Spin Torque Oscillator Modeling, CMOS Design and STO-CMOS Integration

   Författare :Tingsu Chen; Ana Rusu; Atila Alvandpour; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; STO technology; microwave oscillator; analytical model; macrospin approximation; Verilog-A model; high frequency CMOS circuits; balun-LNA; STO-IC integration; Informations- och kommunikationsteknik; Information and Communication Technology;

   Sammanfattning : Spin torque oscillators (STOs) are microwave oscillators with an attractive blend of features, including a more-than-octave tunability, GHz operating frequencies, nanoscale size, nanosecond switching speed and full compatibility with CMOS technology. Over the past decade, STOs' physical phenomena have been explored to a greater extent, their performance has been further improved, and STOs have already shown great potential for a wide range of applications, from microwave sources and detectors to neuromorphic computing. LÄS MER

7. 5. Spin valves and spin-torque oscillators with perpendicualr magnetic anisotropy

   Författare :Seyed Majid Mohseni Armaki; Johan Åkerman; Andrew Kent; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Spin torque oscillator; perpendicular magnetic anisotropy; SRA - ICT; SRA - Informations- och kommunikationsteknik;

   Sammanfattning : Researches in spintronics, especially those remarkably classified in the current induced spin-transfer torque (STT) framework, circumvent challenges with different materials and geometries. Perpendicular magnetic anisotropy (PMA) materials are showing capability of holding promise to be employed in STT based spintronics elements, e.g. LÄS MER