Sökning: "GAAS"

Visar resultat 11 - 15 av 234 avhandlingar innehållade ordet GAAS.

1. 11. Photoelectron Spectroscopy Studies of III-V Semiconductor Systems

   Författare :Henric Åsklund; Chalmers tekniska högskola; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; low temperature MBE; GaAs 111 A; InAs; core-level; GaMnAs; photoelectron spectroscopy; MEE; GaAs; InP 110 :As; valence-band; core-exciton; diluted magnetic semiconductor; MBE; interface; III-V semiconductor; surface; InAs 111 A; thin films;

   Sammanfattning : Photoelectron spectroscopy has been used as a main tool to study a number of III-V semiconductor surfaces. This thesis includes studies of a surface reaction, As/InP(110), thin heteroepitaxial layers, InAs on GaAs(111)A and GaAs on AlAs(100), and a diluted magnetic semiconductor, Ga1-xMnxAs. LÄS MER

3. 12. Optical Studies of Polytypism in GaAs Nanowires

   Författare :Neimantas Vainorius; NanoLund: Centre for Nanoscience; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Photoluminescence; Raman scattering; Polytypism; Quantum confinement; GaAs nanowires; Fysicumarkivet A:2017:Vainorius;

   Sammanfattning : Semiconductor nanowires are often regarded as having potential to be building blocks for novel applications. Their geometry allows defect-free combinations of materials that have a high degree of lattice mismatch. III-V semiconductor nanowires can also be grown in the wurtzite crystal phase, which is not stable in bulk material or thin films. LÄS MER

4. 13. Electronic Structure of Some Zincblende Semiconductor Surfaces

   Författare :Yousef Omar Khazmi; Chalmers tekniska högskola; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; CdTe; valence band; InP; tight-binding; core level; superlattice; surface; Green s function; adsorbates; semiconductor; GaAs; photoemission; electronic structure;

   Sammanfattning : The main aim of this thesis is to study and understand the surface electronic structure of compound semiconductors (ex. GaAs, InP, ..etc. LÄS MER

5. 14. Spectroscopic studies of III-V semiconductors in two, one and zero dimensions

   Författare :Dan Hessman; Fasta tillståndets fysik; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; InAs-InP; low-dimensional structures; quantum wells; quantum dots; quantum wires; k.p calculations; type-II; photoluminescence; V grooves; Stranski Krastanow; single dot spectroscopy; GaAs-InP; III-V semiconductors; Fysicumarkivet A:1996:Hessman; InAs-GaAs; GaInAs-InP; Halvledarfysik; InP-GaInP; Semiconductory physics;

   Sammanfattning : In this thesis, spectroscopic studies of quantum wells (QWs), quantum wires (QWRs) and quantum dots (QDs) in III-V semiconductors are presented. The electronic structure of these low-dimensional structures have been studied by absorption, photocurrent, electroreflectance, photoluminescence (PL), and photoluminescence excitation (PLE) spectroscopy. LÄS MER

7. 15. Gallium arsenide based buried heterostructure laser diodes with aluminium-free semi-insulating materials regrowth

   Författare :Carlos Angulo Barrios; KTH; []
   Nyckelord :semiconductor lasers; in-plane lasers; VCSELs; GaAs; GaInP; semi-insulating materials; hydride vapour phase epitaxy; regrowth; buried heterostructure; leakage current; simulation;

   Sammanfattning : Semiconductor lasers based on gallium arsenide and relatedmaterials are widely used in applications such as opticalcommunication systems, sensing, compact disc players, distancemeasurement, etc. The performance of these lasers can beimproved using a buried heterostructure offering lateralcarrier and optical confinement. LÄS MER