Sökning: "GAAS"

Visar resultat 1 - 5 av 209 avhandlingar innehållade ordet GAAS.

  1. 1. Silicon δ-doping and GaAs/Si/GaAs heterostructures

    Författare :Jan Thordson; Chalmers University of Technology; []
    Nyckelord :GaAs Si GaAs; GaAs; delta-doping; heterostructures; MBE; silicon;

    Sammanfattning : .... LÄS MER

  3. 2. Microstructure of the Schottky contact : Ag/GaAs and Au/GaAs

    Författare :Qiu-Hong Hu; Chalmers University of Technology; []
    Nyckelord :Au; atom-probe fiels-ion microscopy; Schottky contact; interface; Ag; microstructure; transmission electron microscopy; GaAs; oxygen;

    Sammanfattning : .... LÄS MER

  4. 3. Metamorphic Heterostructures and Lasers on GaAs

    Författare :Ivar Tångring; Chalmers University of Technology; []
    Nyckelord :NATURVETENSKAP; TEKNIK OCH TEKNOLOGIER; NATURAL SCIENCES; ENGINEERING AND TECHNOLOGY; metamorphic heterostructures; InGaAs quantum well; graded buffer layer; Semiconductor laser; GaAs; molecular beam epitaxy; telecom laser;

    Sammanfattning : The objective of this thesis is to demonstrate the metamorphic growth of heterostructure lasers on GaAs substrates. Many heterostructure devices have their performance limited by the need to grow on lattice-matched substrates. LÄS MER

  5. 4. Optimization of Metamorphic Materials on GaAs Grown by MBE

    Författare :Yuxin Song; Chalmers University of Technology; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; heterostructures; alloy graded buffer; GaAs; molecular beam epitaxy; metamorphic; threading dislocation; InGaAs;

    Sammanfattning : Advanced epitaxial technologies such as molecular beam epitaxy (MBE) and metal-organic vapor phase epitaxy (MOVPE) have enabled the idea of semiconductor heterostructures, which built up the foundation of the fast developing information and communication technology nowadays. Lattice mismatch has been a problem limiting designs of semiconductor heterostructures. LÄS MER

  7. 5. Atom-Probe Field-Ion Microscopy of Electronic Materials

    Författare :Qiu-Hong Hu; Chalmers University of Technology; []
    Nyckelord :Au GaAs; ohmic contact; superconductors; oxygen ordering; AuGe GaAs; defects; Ag GaAs; Schottky contact; YBa2Cu3O6 delta; APFIM;

    Sammanfattning : This thesis presents work in which atom-probe field-ion microscopy (APFIM) has been applied to two types of electronic materials. In the case of metal/GaAs contacts, the purpose was to characterise the microstructure of the contact interface, particularly the chemical composition variation across the interface. LÄS MER