Sökning: "Field-effect transistors FETs"

Visar resultat 1 - 5 av 25 avhandlingar innehållade orden Field-effect transistors FETs.

1. 1. Silicon Nanowire Field-Effect Devices as Low-Noise Sensors

   Författare :Xi Chen; Zhen Zhang; Shi-Li Zhang; Si Chen; Fengnian Xia; Uppsala universitet; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon nanowire; field-effect transistor; Schottky junction gate; low frequency noise; ion sensor; Teknisk fysik med inriktning mot elektronik; Engineering Science with specialization in Electronics;

   Sammanfattning : In the past decades, silicon nanowire field-effect transistors (SiNWFETs) have been explored for label-free, highly sensitive, and real-time detections of chemical and biological species. The SiNWFETs are anticipated for sensing analyte at ultralow concentrations, even at single-molecule level, owing to their significantly improved charge sensitivity over large-area FETs. LÄS MER

3. 2. Microwave characterisation of electrodes and field effect transistors based on graphene

   Författare :MICHAEL ANDERSSON; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Graphene; graphene electrodes; microwave amplifiers; noise measurements; microwave FETs; CVD graphene; noise modelling; FBARs.; nanofabrication; subharmonic resistive mixers; small-signal FET modelling;

   Sammanfattning : The isolation of the two-dimensional material graphene, a single hexagonal sheet of carbon atoms, is believed to trigger a revolution in electronics. Theory predicts unprecedented carrier velocities in ideal graphene, from which ultrahigh speed graphene field effect transistors (GFETs) are envisioned. LÄS MER

4. 3. Charge carrier transport in field-effect transistors with two-dimensional electron gas channels studied using geometrical magnetoresistance effect

   Författare :Isabel Harrysson Rodrigues; Chalmers tekniska högskola; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES; low-field mobility; high-electron-mobility transistor; velocity saturation; quasi-ballistic charge carrier transport; two-dimensional electron gas; charge carrier scattering mechanisms; geometrical magnetoresistance; low noise and high frequency applications; velocity peak; graphene field-effect transistor; charge carrier trans- port;

   Sammanfattning : During the last decades, significant efforts have been made to exploit the excellent and promising electronic properties exhibited by field-effect transistors (FETs) with two-dimensional electron gas (2DEG) channels. The most prominent representatives of this class of devices are high-electron-mobility transistors (HEMTs) and graphene field-effect transistors (GFETs). LÄS MER

5. 4. Selectivity Enhancement of Gas Sensitive Field Effect Transistors by Dynamic Operation

   Författare :Christian Bur; Anita Lloyd Spetz; Andreas Schütze; Mike Andersson; Stephen Semancik; Linköpings universitet; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES;

   Sammanfattning : Gas sensitive field effect transistors based on silicon carbide, SiC-FETs, have been applied to various applications mainly in the area of exhaust and combustion monitoring. So far, these sensors have normally been operated at constant temperatures and adaptations to specific applications have been done by material and transducer platform optimization. LÄS MER

7. 5. Microwave and millimeter-wave FETs and noise parameter measurements

   Författare :Hans-Olof Vickes; Chalmers tekniska högskola; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Programmable load; Phase shifter; Active filters; Semiconductor devices and materials; Field-effect Transistors; Noise parameters; Equivalent circuits; Dual-gate MESFET; Circuit partitioning; Microwave devices and components;

   Sammanfattning : .... LÄS MER