Sökning: "Fe doped GaN"
Hittade 5 avhandlingar innehållade orden Fe doped GaN.
1. Gallium nitride templates and its related materials for electronic and photonic devices
Sammanfattning : .... LÄS MER
2. Design, Fabrication and Characterization of GaN HEMTs for Power Switching Applications
Sammanfattning : The unique properties of the III-nitride heterostructure, consisting of gallium nitride (GaN), aluminium nitride (AlN) and their ternary compounds (e.g. AlGaN, InAlN), allow for the fabrication of high electron mobility transistors (HEMTs). LÄS MER
3. Optical properties of GaN and InGaN studied by time- and spatially-resolved spectroscopy
Sammanfattning : The past decade has seen rapid expansion in the use of group III-nitride based devices. White InGaN LEDs are substituting incandescent light bulbs, space satellite industry adopting ion-radiation-resistant GaN transistors, and AlGaN deep UV LEDs are increasingly being used for water disinfection and air purification. LÄS MER
4. Optimization of Ohmic Contacts and Surface Passivation for ‘Buffer-Free’ GaN HEMT Technologies
Sammanfattning : Gallium nitride high electron mobility transistors (GaN HEMTs) draw attention from high frequency and high power industries due to unique properties including high electron mobility and saturation velocity combined with high breakdown voltage. This makes GaN HEMTs suitable for power devices with high switching speed and high frequency applications with high power density requirements. LÄS MER
5. Hot-wall MOCVD for advanced GaN HEMT structures and improved p-type doping
Sammanfattning : The transition to energy efficient smart grid and wireless communication with improved capacity require the development and optimization of next generation semiconductor technologies and electronic device components. Indium nitride (InN), gallium nitride (GaN) and aluminum nitride (AlN) compounds and their alloys are direct bandgap semiconductors with bandgap energies ranging from 0. LÄS MER