Sökning: "Etching"

Visar resultat 1 - 5 av 180 avhandlingar innehållade ordet Etching.

  1. 1. Ion beam etching of InP based materials

    Detta är en avhandling från Kista : Mikroelektronik och informationsteknik

    Författare :Carl-Fredrik Carlström; KTH.; [2001]
    Nyckelord :InP; dry etching; ion beam etching; RIBE; CAIBE; hydrocarbon chemistry; trimethylamine; As P exchange reaction; morphology; low damage; AFM; SCM; annealing;

    Sammanfattning : Dry etching is an important technique for pattern transferin fabrication of most opto-electronic devices, since it canprovide good control of both structure size and shape even on asub-micron scale. Unfortunately, this process step may causedamage to the material which is detrimental to deviceperformance. LÄS MER

  2. 2. Two-Dimensional Photonic Crystals in InP-based Materials

    Detta är en avhandling från Kista : Mikroelektronik och informationsteknik

    Författare :Mikaël Mulot; KTH.; [2004]
    Nyckelord :Photonic crystals; photonic bandgap materials; indium phosphide; dry etching; chemically assisted ion beam etching; reactive ion etching; electron beam lithography; photonic integrated circuits; optical waveguides; resonant cavities; optical filterin;

    Sammanfattning : Photonic crystals (PhCs) are structures periodic in thedielectric constant. They exhibit a photonic bandgap, i.e., arange of wavelengths for which light propagation is forbidden. LÄS MER

  3. 3. Fabrication of Low-Dimensional Structures in III-V Semiconductors

    Detta är en avhandling från Solid State Physics, Lund University

    Författare :Ivan Maximov; Lunds universitet.; Lund University.; [1997]
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; III-V semiconductors; plasma; etching; aerosol; lithography; quantum dots; quantum well wires; quantum point contact; damage; luminescence; Fysicumarkivet A:1997:Maximov; Halvledarfysik; Semiconductory physics;

    Sammanfattning : The thesis presents studies on the processing technology and the characterization of nanometer-sized and low-dimensional structures in III-V semiconductors. Two major approaches are described: 1) the combination of aerosol technology and plasma etching for the fabrication of quantum dots (QDs) in InP-based materials and 2) the use of high-resolution electron beam lithography and plasma or wet chemical etching to make quantum well wires (QWWs) in both GaAs and InP-based structures. LÄS MER

  4. 4. Source and drain engineering in SiGe-based pMOS transistors

    Detta är en avhandling från Stockholm : KTH

    Författare :Christian Isheden; KTH.; [2005]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Electronics; SiGe; source drain; shallow junctions; pMOS; process integration; CVD; epitaxy; etching; Ni silicide; contact resistivity; Elektronik; TECHNOLOGY Electrical engineering; electronics and photonics Electronics; TEKNIKVETENSKAP Elektroteknik; elektronik och fotonik Elektronik;

    Sammanfattning : A new shallow junction formation process, based on selective silicon etching followed by selective growth of in situ B-doped SiGe, is presented. The approach is advantageous compared to conventional ion implantation followed by thermal activation, because perfectly abrupt, low resistivity junctions of arbitrary depth can be obtained. LÄS MER

  5. 5. Studies on the alpha-recoil implantation of 214Pb and 210Pb in glass surfaces,Implications for retrospective radon measurements

    Detta är en avhandling från Department of Radiation Physics, Lund university

    Författare :Birgitta Roos; Lunds universitet.; Lund University.; [2002]
    Nyckelord :MEDICIN OCH HÄLSOVETENSKAP; MEDICAL AND HEALTH SCIENCES; unattached activity; attached activity; retrospective radon measurement; long-lived radon progenies; short-lived radon progenies; deposition velocity; implantation; 222Rn; glass surface; etching; simulation; Nuclear physics; Kärnfysik;

    Sammanfattning : Popular Abstract in Swedish Glas kan användas för retrospektiva radon mätningar på grund av radondöttrars förmåga att implantera i glasets översta skikt. Mängden implanterad aktivitet blir lätt påverkad av en rad olika faktorer i den omgivande luften. LÄS MER