Sökning: "Erik Janzén"
Visar resultat 6 - 10 av 22 avhandlingar innehållade orden Erik Janzén.
6. MOCVD growth of GaN-based high electron mobility transistor structures
Sammanfattning : The present work was to improve the overall quality of GaN-based high electron mobility transistor (HEMT) epitaxial structures grown on semi-insulating (SI) SiC and native GaN substrates, using an approach called bottom-to-top optimization. The bottom-to-top optimization means an entire growth process optimization, from in-situ substrate pretreatment to the epitaxial growth and then the cooling process. LÄS MER
7. Growth and characterization of SiC and GaN
Sammanfattning : At present, focus of the SiC crystal growth development is on improving the crystalline quality without polytype inclusions, micropipes and the occurrence of extended defects. The purity of the grown material, as well as intentional doping must be well controlled and the processes understood. LÄS MER
8. Simulations of Silicon Carbide Chemical Vapor Deposition
Sammanfattning : Most of the modern electronics technology is based on the semiconducting material silicon. The increasing demands for smaller electronic devices with improved performance at lower costs drive the conventional silicon technology to its limits. LÄS MER
9. Electronic properties of intrinsic defects and impurities in GaN
Sammanfattning : With its outstanding properties such as a wide direct bandgap (3.4 eV), high electron mobility and high breakdown voltage, GaN and its alloys with In and Al are considered as one of the most important semiconductors for optoelectronic devices and high-power and high-frequency transistors. LÄS MER
10. Investigation of deep levels in bulk GaN
Sammanfattning : The first gallium nitride (GaN) crystal was grown by hydride vapor phase epitaxy in 1969 by Maruska and Tietjen and since then, there has been an intensive development of the field, especially after the ground breaking discoveries concerning growth and p-type doping of GaN done by the 2014 year Nobel Laureates in Physics, Isamu Akasaki, Hiroshi Amano and Shuji Nakamura. GaN and its alloys with In and Al belong to a semiconductor group which is referred as the III-nitrides. LÄS MER