Sökning: "Epitaxial Graphene"
Visar resultat 16 - 20 av 25 avhandlingar innehållade orden Epitaxial Graphene.
16. Structural and Electronic Properties of Graphene on 4H- and 3C-SiC
Sammanfattning : Graphene is a one-atom-tick carbon layer arranged in a honeycomb lattice. Graphene was first experimentally demonstrated by Andre Geim and Konstantin Novoselov in 2004 using mechanical exfoliation of highly oriented pyrolytic graphite (exfoliated graphene flakes), for which they received the Nobel Prize in Physics in 2010. LÄS MER
17. Growth of 3C-SiC and Graphene for Solar Water-Splitting Application
Sammanfattning : Silicon carbide (SiC) is regarded as an important semiconductor for a variety of applications including high-temperature, high-power and high-frequency devices. The most common polytypes of SiC are hexagonal (4H- or 6H-SiC) and cubic silicon carbide (3C-SiC), which differ from each other by the ordering of the Si–C bilayers along the c-axis crystal direction. LÄS MER
18. Free charge carrier properties in group III nitrides and graphene studied by THz-to-MIR ellipsometry and optical Hall effect
Sammanfattning : Development of silicon based electronics have revolutionized our every day life during the last five decades. Nowadays silicon based devices operate close to their theoretical limits that is becoming a bottleneck for further progress. LÄS MER
19. Study of novel electronic materials by mid-infrared and terahertz optical Hall effect
Sammanfattning : Development of silicon based electronics have revolutionized our every day life during the last three decades. Nowadays Si based devices operate close to their theoretical limits that is becoming a bottleneck for further progress. LÄS MER
20. Chemical vapour deposition of sp2-hybridised B-C-N materials from organoborons
Sammanfattning : Thin films of sp2-BN are promising materials for graphene and deep-UV optoelectronics. They are typically deposited by thermally activated chemical vapour deposition (CVD) from triethylboron (TEB) and ammonia (NH3) at 1500 °C, albeit in a narrow process window. LÄS MER