Sökning: "Epitaxi"

Visar resultat 1 - 5 av 11 avhandlingar innehållade ordet Epitaxi.

1. 1. Germanium layer transfer and device fabrication for monolithic 3D integration

   Författare :Ahmad Abedin; Mikael Östling; Cor Claeys; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Monolithic; sequential; 3D; silicon; germanium; wafer bonding; etch back; germanium on insulator; GOI; Ge pFET; low temperature; Sipassivation; pn junction; Kisel; germanium; epitaxi; selektiv; pn-övergång; germanium påisolator; GOI; Ge PFET; bonding; monolitisk; sekventiell; tre dimensionell; 3D; lågtemperarad;

   Sammanfattning : Monolithic three-dimensional (M3D) integration, it has been proposed,can overcome the limitations of further circuits’ performance improvementand functionality expansion. The emergence of the internet of things (IoT) isdriving the semiconductor industry toward the fabrication of higher-performancecircuits with diverse functionality. LÄS MER

3. 2. Growth and Characterization of ZrB2 Thin Films

   Författare :Lina Tengdelius; Hans Högberg; Urban Forsberg; Denis Music; Linköpings universitet; []
   Nyckelord :Zirconium diboride ZrB2 ; Thin film; Magnetron sputtering; Epitaxi; Silicon carbide SiC ;

   Sammanfattning : In this thesis, growth of ZrB2 thin films by direct current magnetron sputtering is investigatedusing a high vacuum industrial scale deposition system and an ultra-high vacuum laboratory scalesystem. The films were grown from ZrB2 compound targets at temperatures ranging from ambient (without external heating) to 900 °C and with substrate biases from -20 to -120 V. LÄS MER

4. 3. Growth and Characterization of Strain-engineered Si/SiGe Heterostructures Prepared by Molecular Beam Epitaxy

   Författare :Ming Zhao; Wei-Xin Ni; Göran Hansson; Kang L. Wang; Linköpings universitet; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Si SiGe; Strain engineering; Molecular beam epitaxy; THz; Quantum cascade; Strain relaxation; Materials science; Teknisk materialvetenskap;

   Sammanfattning : The strain introduced by lattice mismatch is a built-in characteristic in Si/SiGe heterostructures, which has significant influences on various material properties. Proper design and precise control of strain within Si/SiGe heterostructures, i.e. LÄS MER

5. 4. Electron Transport in Semiconductor Nanowires

   Författare :Mikael Björk; Fasta tillståndets fysik; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; heterostructures; single electron transistors; resonant tunneling; quantum dots; weak antilocalization; Halvledarfysik; field effect transistors; Semiconductory physics; Fysicumarkivet A:2004:Björk; Low-dimensional structures; nanowires; chemical beam epitaxy;

   Sammanfattning : In this thesis, semiconductor nanowires are studied from the point of view of growth and electrical properties. The growth of nanowires is done by chemical beam epitaxy (CBE), an ultra-high vacuum technique allowing a precise control of precursor deposition and low growth rates. LÄS MER

7. 5. Simulation and Electrical Evaluation of 4H-SiC Junction Field Effect Transistors and Junction Barrier Schottky Diodes with Buried Grids

   Författare :Jang-Kwon Lim; Hans-Peter Nee; Mietek Bakowski; Ichiro Omura; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon carbide SiC ; junction field-effect transistors JFETs ; junction barrier schottky diode JBS ; schottky barrier diode SBD ; buried-grid BG technology; simulation; implantation; epitaxial growth; Electrical Engineering; Elektro- och systemteknik;

   Sammanfattning : Silicon carbide (SiC) has higher breakdown field strength than silicon (Si), which enables thinner and more highly doped drift layers compared to Si. Consequently, the power losses can be reduced compared to Si-based power conversion systems. Moreover, SiC allows the power conversion systems to operate at high temperatures up to 250 oC. LÄS MER