Sökning: "Electronics and Electrical technology"

Visar resultat 21 - 25 av 703 avhandlingar innehållade orden Electronics and Electrical technology.

  1. 21. Electronic Sensors Based on Nanostructured Field-Effect Devices

    Författare :Si Chen; Shili Zhang; Jan Linnros; Christian Schönenberger; Uppsala universitet; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; biosensor; field-effect transistor; nanowire; ISFET; Elektronik; Electronics;

    Sammanfattning : Point-of-care (POC) diagnostics presents a giant market opportunity with profound societal impact. In particular, specific detection of DNA and protein markers can be essential for early diagnosis of e.g. cancer, cardiovascular disease, infections or allergies. LÄS MER

  2. 22. Hybrid Materials for Wearable Electronics and Electrochemical Systems

    Författare :Mehmet Girayhan Say; Isak Engquist; Magnus Berggren; Shizuo Tokito; Linköpings universitet; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Wearables; Green electronics; Organic electronics; Conductive polymers;

    Sammanfattning : Flexible electronic systems such as wearable devices, sensors and electronic skin require power sources and sensing units that are mechanically robust, operational at low bending radius, and environmentally friendly. Recently, there has been an enormous interest in active materials such as thin film semiconductors, conductive polymers, and ion-electron conductors. LÄS MER

  3. 23. Upconversion in Er doped silica : - characterization and modeling

    Författare :Dmitry Khoptyar; Bozena Jaskorszynska; Anders Bjarklev; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Electrical engineering; Elektroteknik; elektronik och fotonik; Electrical engineering; electronics and photonics; Elektroteknik; elektronik och fotonik;

    Sammanfattning : Further increase of erbium concentrations in Er-doped amplifiers and lasers is needed for the design of efficient, reliable, compact and cost-effective components for telecommunications and other photonic applications. However, this is hindered by Er concentration dependent loss mechanism known as upconversion. LÄS MER

  4. 24. Processing, Characterization and Modeling of AlGaN/GaN HEMTs

    Författare :Vincent Desmaris; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; GaN; HEMT; III-Nitride processing; microwave modeling; AlGaN GaN; HFET; heterojunction field effect transistor; microwave devices; III-Nitride; Schottky diodes; Gallium nitride; resistive mixer; high electron mobility transistor; wide bandgap;

    Sammanfattning : III-Nitrides electronic properties make them currently the materials of choice for high-power high-frequency applications. Their wide bandgaps, high breakdown fields, the high electron peak and saturation velocities combined with the large conduction band offset and the high electron mobility observed in AlGaN/GaN heterostructures enable excellent microwave power performance of AlGaN/GaN high electron mobility transistors (HEMTs). LÄS MER

  5. 25. Characterisation and Modelling of Graphene FETs for Terahertz Mixers and Detectors

    Författare :MICHAEL ANDERSSON; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; graphene; millimetre and submillimetre waves; power detectors; nonlinear device modelling; microwave amplifiers; nanofabrication; integrated circuits; noise modelling; Field-effect transistors FETs ; terahertz detectors; Volterra; subharmonic resistive mixers;

    Sammanfattning : Graphene is a two-dimensional sheet of carbon atoms with numerous envisaged applications owing to its exciting properties. In particular, ultrahigh-speed graphene field effect transistors (GFETs) are possible due to the unprecedented carrier velocities in ideal graphene. LÄS MER